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Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same

  • US 8,558,263 B2
  • Filed: 06/14/2011
  • Issued: 10/15/2013
  • Est. Priority Date: 12/28/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor light emitting diode comprising:

  • a first semiconductor layer;

    an active layer formed on the first semiconductor layer;

    a second semiconductor layer formed on the active layer;

    a mask layer formed on the second semiconductor layer, the mask layer having a plurality of openings, and having a thickness thinner than that of the second semiconductor layer;

    a third semiconductor layer, having a textured structure on an upper surface thereof, formed on a surface of the second semiconductor layer through the plurality of openings; and

    a transparent electrode formed on the third semiconductor layer, having a textured structure on an upper surface thereof, and having a shape which corresponds to that of the textured structure of the third semiconductor layer,wherein the first semiconductor layer is an n-type semiconductor layer and the second and third semiconductor layers are p-type semiconductor layers.

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