Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same

• US 8,558,263 B2
• Filed: 06/14/2011
• Issued: 10/15/2013
• Est. Priority Date: 12/28/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yoon, Suk-ho, Sone, Cheol-soo
• Primary Examiner(s): Smoot, Stephen W
• Assistant Examiner(s): Booker, Vicki B
• Application Number:
  US13/159,993
• Publication Number:
  US 20110248306A1
• Time in Patent Office: 854 Days
• Field of Search: 257/98, 257/E33.074
• US Class Current: 257/98
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Claims

1. A semiconductor light emitting diode comprising:

a first semiconductor layer;

an active layer formed on the first semiconductor layer;

a second semiconductor layer formed on the active layer;

a mask layer formed on the second semiconductor layer, the mask layer having a plurality of openings, and having a thickness thinner than that of the second semiconductor layer;

a third semiconductor layer, having a textured structure on an upper surface thereof, formed on a surface of the second semiconductor layer through the plurality of openings; and

a transparent electrode formed on the third semiconductor layer, having a textured structure on an upper surface thereof, and having a shape which corresponds to that of the textured structure of the third semiconductor layer,

wherein the first semiconductor layer is an n-type semiconductor layer and the second and third semiconductor layers are p-type semiconductor layers.

2. The semiconductor light emitting diode of claim 1, wherein the mask layer is formed of a material that comprises Si_xN_y.

3. The semiconductor light emitting diode of claim 1, wherein openings among the plurality of openings have irregular sizes and periods.

4. The semiconductor light emitting diode of claim 1, wherein the third semiconductor layer is made of the same material as that of the second semiconductor layer.

5. The semiconductor light emitting diode of claim 1, wherein light generated by the active layer is extracted to the outside through the transparent electrode.

6. The semiconductor light emitting diode of claim 1, wherein at least a portion of an upper surface of the mask layer is covered with the third semiconductor layer.