White light devices using non-polar or semipolar gallium containing materials and phosphors
First Claim
Patent Images
1. A light emitting device comprising:
- a substrate member comprising a first surface region;
one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths;
an optically transparent member coupled to the one or more light emitting diode devices;
an optical path provided between the one or more light emitting diode devices and the optically transparent member; and
a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths;
wherein the bulk gallium nitride substrate has a dislocation density in the plane of the large-area surface that is less than 5×
106 cm−
2.
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Abstract
A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
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Citations
45 Claims
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1. A light emitting device comprising:
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a substrate member comprising a first surface region; one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths; an optically transparent member coupled to the one or more light emitting diode devices; an optical path provided between the one or more light emitting diode devices and the optically transparent member; and a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths; wherein the bulk gallium nitride substrate has a dislocation density in the plane of the large-area surface that is less than 5×
106 cm−
2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting device comprising:
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a substrate member comprising a first surface region; one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths; an optically transparent member coupled to the one or more light emitting diode devices; an optical path provided between the one or more light emitting diode devices and the optically transparent member; and a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths; wherein a crystallographic orientation of the device substrate is within ±
5 degrees of the {1 −
1 0 0} m plane, the {1 1 −
2 0} a plane, the {1 1 −
2 2} plane, the {2 0 −
2±
1} plane, the {1 −
1 0±
1} plane, the {1 −
1 0 −
±
2} plane, or the {1 −
1 0±
3} plane. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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43. A light emitting device comprising:
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a substrate member having a first surface; at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate; an optically transparent member coupled to the at least one light emitting diode; an optical path between the at least one light emitting diode and the optically transparent; and a blend of phosphors, the phosphors being excited by the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths; wherein the substantially polarized emission of first wavelengths comprises blue light and the phosphor blend emits electromagnetic radiation at second wavelengths comprising yellow and red.
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44. A light emitting device comprising:
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a substrate member having a first surface; at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate; an optically transparent member coupled to the at least one light emitting diode; an optical path between the at least one light emitting diode and the optically transparent; and a blend of phosphors, the phosphors being excited by the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths; wherein the substantially polarized emission of first wavelengths comprises violet light and the phosphor blend emits electromagnetic radiation at second wavelengths comprising blue, green, and red.
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45. A light emitting device comprising:
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a substrate member having a first surface; at least one light emitting diode overlying the first surface emitting a substantially polarized emission of first wavelengths, the light emitting diode comprising a device substrate comprising a semipolar or nonpolar bulk gallium nitride substrate; an optically transparent member coupled to the at least one light emitting diode; an optical path between the at least one light emitting diode and the optically transparent; and a blend of phosphors, the phosphors being excited by the substantially polarized emission of first wavelengths to thereby emit electromagnetic radiation at second wavelengths; wherein the substantially polarized emission of first wavelengths comprises blue light and the phosphor blend emits electromagnetic radiation at second wavelengths comprising green and red.
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Specification