Semiconductor device and method of manufacturing the semiconductor device
First Claim
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1. A semiconductor device having a multilayered wiring layer formed over a substrate,wherein a first layer contained in the multilayered wiring layer has:
- a first interlayer insulating film; and
a plurality of first via holes buried in the first interlayer insulating film, and a plurality of first wirings buried in the first interlayer insulating film, connected with the first via holes, and exposed at the surface from the first interlayer insulating film, andwherein a second layer contained in the multilayered wiring layer and situated just over has, in a first region,an MRAM (magnetoresistive random access memory) having at least two first magnetization pinning layers in contact with the first wiring and insulated from each other,a free magnetization layer overlapping the two first magnetization pinning layer in a plan view and connected with the first magnetization pinning layers,a non-magnetic layer situated over the free magnetization layer, anda second magnetization pinning layers situated over the non-magnetic layer;
a second interlayer insulating film covering the MRAM;
a second via hole buried in the second interlayer insulating film and connected with the second magnetization pinning layers; and
a second wiring buried in the second interlayer insulating film, connected with the second via hole, and exposed at the surface from the second interlayer insulating film.
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Abstract
A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
40 Citations
10 Claims
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1. A semiconductor device having a multilayered wiring layer formed over a substrate,
wherein a first layer contained in the multilayered wiring layer has: -
a first interlayer insulating film; and a plurality of first via holes buried in the first interlayer insulating film, and a plurality of first wirings buried in the first interlayer insulating film, connected with the first via holes, and exposed at the surface from the first interlayer insulating film, and wherein a second layer contained in the multilayered wiring layer and situated just over has, in a first region, an MRAM (magnetoresistive random access memory) having at least two first magnetization pinning layers in contact with the first wiring and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layer in a plan view and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layers situated over the non-magnetic layer; a second interlayer insulating film covering the MRAM; a second via hole buried in the second interlayer insulating film and connected with the second magnetization pinning layers; and a second wiring buried in the second interlayer insulating film, connected with the second via hole, and exposed at the surface from the second interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification