Package in package device for RF transceiver module

• US 8,558,365 B1
• Filed: 09/27/2011
• Issued: 10/15/2013
• Est. Priority Date: 01/09/2009
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Roa, Fernando, St. Amand, Roger D.
• Primary Examiner(s): Cao, Phat X
• Application Number:
  US13/246,564
• Time in Patent Office: 749 Days
• Field of Search: 257/686, 257/777, 257/E23.085
• US Class Current: 257/686
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/06575 Auxiliary carrier between devices, the carrier having no electrical connection structure
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

In accordance with the present invention, there is provided multiple embodiments of a package-in-package semiconductor device including an RF package and a semiconductor die which are provided in a stacked arrangement and are each electrically connected to an underlying substrate through the use of conductive wires alone or in combination with conductive bumps. In certain embodiments of the present invention, the RF package and the semiconductor die are separated from each other by an intervening spacer which is fabricated from aluminum, or from silicon coated with aluminum. If included in the semiconductor device, the spacer is also electrically connected to the substrate, preferably through the use of conductive wires. The RF package, the semiconductor die, the spacer (if included) and a portion of the substrate are at least partially covered or encapsulated by a package body of the semiconductor device.

Claims

1. A semiconductor device, comprising:

a substrate having a conductive pattern disposed thereon;

an RF package including a package substrate having an RF shield attached thereto, wherein the package substrate is electrically connected to the conductive pattern of the substrate;

a conductive spacer attached to the RF shield and electrically connected to the conductive pattern of the substrate;

a semiconductor die stacked upon the conductive spacer and electrically connected to the conductive pattern of the substrate; and

a package body at least partially encapsulating the RF package, the conductive spacer, the semiconductor die and the substrate.

2. the semiconductor device of claim 1 wherein the substrate comprises:

an insulative layer defining opposed first and second surfaces; and

a plurality of lands disposed on the second surface;

the conductive pattern being disposed on the first surface and electrically connected to the lands in a prescribed manner.

3. The semiconductor device of claim 1 wherein the RF package is electrically connected to the conductive pattern by conductive bumps which are encapsulated by the package body.

4. The semiconductor device of claim 1 wherein the semiconductor die is electrically connected to the conductive pattern by at least one conductive wire which is encapsulated by the package body.

5. The semiconductor device of claim 1, wherein the conductive spacer is electrically connected to the substrate by at least one conductive wire, and wherein the semiconductor die is attached to the conductive spacer by a film-over-wire that encapsulates a portion of the at least one conductive wire, and wherein the package body encapsulates a remaining portion of the at least one conductive wire.

6. The semiconductor device of claim 5, wherein:

the RF shield of the RF package defines a peripheral side surface; and

the semiconductor die defines a peripheral side surface, at least a portion of which protrudes outwardly beyond the side surface of the RF shield.

7. A semiconductor device, comprising:

a substrate;

an RF package including a package substrate which is electrically connected to the substrate by conductive bumps, a plurality electronic components attached to a top surface of the package substrate, inner wire bonds electrically connecting the plurality of electronic components to the package substrate, and an RF shield which is attached to the package substrate without extending to the substrate, wherein the RF shield is spaced apart from the inner wire bonds and the plurality of electronic components;

a semiconductor die stacked upon the RF package; and

a package body at least partially encapsulating the RF package, the semiconductor die, the conductive bumps, and the substrate.

8. The semiconductor device of claim 7 wherein the substrate comprises:

an insulative layer defining opposed first and second surfaces;

a plurality of lands disposed on the second surface; and

a conductive pattern disposed on the first surface and electrically connected to the lands in a prescribed manner;

the conductive bumps being used to facilitate the electrical connection of the RF package to the conductive pattern.

9. The semiconductor device of claim 7 wherein the semiconductor die is electrically connected to the substrate by at least one conductive wire which is encapsulated by the package body.

10. The semiconductor device of claim 7 further comprising a spacer interposed between the semiconductor die and the RF shield, wherein the spacer is electrically connected to the substrate by at least one conductive wire, and wherein the semiconductor die attached to the spacer by a film-over-wire that encapsulates a portion of the at least one conductive wire, and wherein the package body encapsulates a remaining portion of the at least one conductive wire.

11. The semiconductor device of claim 7 wherein:

the RF shield of the RF package defines a peripheral side surface; and

the semiconductor die defines a peripheral side surface, at least a portion of which protrudes outwardly beyond the side surface of the RF shield.

12. A semiconductor device, comprising:

a substrate;

a RF package electrically connected to the substrate, the RF package including a package substrate having an RF shield attached thereto;

a spacer attached to the RF shield and electrically coupled to the substrate by at least one conductive wire;

a semiconductor die attached to the spacer and electrically connected to the substrate, wherein the semiconductor die is attached to the spacer by a film-over-wire that encapsulates a portion of the at least one conductive wire; and

a package body at least partially encapsulating the RF package, the semiconductor die, the spacer, a remaining portion of the at least one conductive wire, and the substrate.

13. The semiconductor device of claim 12 wherein the substrate comprises:

an insulative layer defining opposed first and second surfaces;

a plurality of lands disposed on the second surface; and

a conductive pattern disposed on the first surface and electrically connected to the lands in a prescribe manner.

14. The semiconductor device of claim 13 wherein the RF package is electrically connected to the conductive pattern by conductive bumps which are encapsulated by the package body.

15. The semiconductor of claim 13 wherein the semiconductor die is electrically connected to the conductive pattern by at least one conductive wire which is encapsulated by the package body.

16. The semiconductor device of claim 12 wherein the semiconductor die and the film-over-wire have substantially equal widths.

17. The semiconductor device of claim 12 wherein:

the RF shield of the RF package defines a peripheral side surface; and

the semiconductor die defines a peripheral side surface, at least a portion of which protrudes outwardly beyond the side surface of the RF shield.

18. The semiconductor device of claim 12, wherein the spacer protrudes outwardly beyond a peripheral side surface of the RF shield.

19. The semiconductor device of claim 12, wherein the RF package comprises a plurality of electrical components electrically connected to the package substrate.

20. The semiconductor device of claim 12 wherein:

the spacer is attached to the RF shield by an adhesive layer; and

the semiconductor die is attached to the spacer have different widths.