Interconnection structure and display device including interconnection structure

• US 8,558,382 B2
• Filed: 07/27/2010
• Issued: 10/15/2013
• Est. Priority Date: 07/27/2009
• Status: Active Grant

• Current Assignee: Klaus Schmidt
• Original Assignee: Kobe Steel Limited
• Inventors: Goto, Hiroshi, Hirano, Takayuki, Maeda, Takeaki, Iwanari, Yumi
• Primary Examiner(s): LE, THAO P
• Application Number:
  US13/387,557
• Publication Number:
  US 20120126227A1
• Time in Patent Office: 1,176 Days
• Field of Search: 257/750, 257/751, 257/765, 257/767, 438/618
• US Class Current: 257/751
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.

Claims

1. An interconnection structure including a layer of interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein

(1) the semiconductor layer is composed of an oxide semiconductors;

(2) the layer of interconnection film is connected directly to a transparent conductive film constituting a pixel electrode on the same plane where the layer of interconnection film is connected directly to the semiconductor layer; and

(3) the layer of interconnection film is an Al alloy film containing at least one of Ni and Co and is connected directly to the semiconductor layer, the layer of interconnection film is a Cu alloy film and is connected directly to the semiconductor layer, or the layer of interconnection film is a Cu film and is connected directly to the semiconductor layer.

2. The interconnection structure according to claim 1, wherein the layer of interconnection film is a Cu alloy film and is connected directly to the semiconductor layer.

3. The interconnection structure according to claim 1, wherein the layer of interconnection film is an Al alloy film containing at least one of Ni and Co and is connected directly to the semiconductor layer.

4. The interconnection structure according to claim 3, wherein the Al alloy film contains at least one of Ni and Co in an amount of from 0.1 to 2 atomic %.

5. The interconnection structure according to claim 3, wherein a part of at least one of Ni and Co is deposited and/or enriched at an interface between the Al alloy film and the semiconductor layer.

6. The interconnection structure according to claim 3, wherein the Al alloy film further contains at least one of Cu and Ge in an amount of from 0.05 to 2 atomic %.

7. The interconnection structure according to claim 3, wherein the Al alloy film further contains a rare earth element in an amount of from 0.05 to 1 atomic %.

8. The interconnection structure according to claim 3, wherein an irregularity having a maximum height roughness Rz of 5 nm or more is formed on a surface of the Al alloy film connected directly to the semiconductor layer.

9. The interconnection structure according to claim 1, which includes an insulating film between the layer of interconnection film and the substrate.

13. The interconnection structure according to claim 9, wherein the interconnection film is a Cu alloy film containing at least one element selected from the group consisting of Mn, Ni, Zn, Al, Ti, Mg, Ca, W, and Nb and is connected directly to the insulating film, and the semiconductor layer.

14. The interconnection structure according to claim 13, wherein the Cu alloy film contains at least one element selected from the group consisting of Mn, Ni, Zn, Al, Ti, Mg, Ca, W, and Nb in an amount of from 0.5 to 10 atomic %.

15. The interconnection structure according to claim 13, wherein the Cu alloy film contains at least Mn in an amount of 0.5 atomic % or more and at least one element selected from the group consisting of B, Ag, C, W, Ca, and Mg in an amount of 0.3 atomic % or more.

16. The interconnection structure according to claim 13, wherein a part of Mn is deposited and/or enriched at an interface between the insulating film and the Cu alloy film.

17. The interconnection structure according to claim 9, wherein the layer of interconnection film is a Cu film.

18. The interconnection structure according to claim 1, wherein the oxide semiconductor is composed of an oxide containing at least one element selected from the group consisting of In, Ga, Zn, Ti, and Sn.

19. A display device including the interconnection structure according to claim 1.

10. The interconnection structure including an insulating film, an interconnection film, and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein

the semiconductor layer is composed of an oxide semiconductor,

the interconnection film is a Cu alloy film and has a laminated structure including

a first layer (Y) composed of a Cu alloy containing at least one element selected from the group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn in an amount of from 2 to 20 atomic % in total;

and

a second layer (X) composed of pure Cu or a Cu alloy containing Cu as a main component, which has an electrical resistivity lower than the first layer (Y),

wherein the first layer (Y) is connected directly to the insulating film; and

the second layer (X) is connected directly to the semiconductor layer.

11. The interconnection structure according to claim 10, wherein a film thickness of the first layer (Y) is 10 nm or more and 100 nm or less and is 60% or less of the whole film thickness of the Cu alloy film.

12. The interconnection structure according to claim 10, wherein a part of Mn is deposited and/or enriched at an interface between the insulating film, and the Cu alloy film.