Interconnect structure containing various capping materials for electrical fuse and other related applications

• US 8,558,384 B2
• Filed: 06/29/2012
• Issued: 10/15/2013
• Est. Priority Date: 05/09/2008
• Status: Active Grant

• Current Assignee: Auriga Innovations, Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: International Business Machines Corporation
• Inventors: Hsu, Louis L., Tonti, William R., Yang, Chih-Chao
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/537,879
• Publication Number:
  US 20120261794A1
• Time in Patent Office: 473 Days
• Field of Search: 257/758, 257/E21.019, 257/E21.579, 257/E23.142, 257/E23.145
• US Class Current: 257/758
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

Claims

1. A structure comprising:

a first macro having a metal wiring layer on a first level electrically connected through an opening in a first capping layer to a metal wiring layer on a second layer and a second capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance; and

a second macro having a metal wiring layer on the first level electrically connected through an opening in a first capping layer to a metal wiring layer on the second layer and a second capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance.

2. The structure of claim 1, wherein the second capping layer of the first macro is SiN and the second capping layer of the second macro is one of Co(W,P,B), Ru, Ir, Rh and Pt.

3. The structure of claim 1, wherein the second capping layer of the first and the second macro is a same material, and the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged thereby providing a degraded electromigration (EM) resistance than that of the first macro.

4. The structure of claim 3, wherein the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged to degrade adhesion between the second capping layer of the second macro and the metal wiring layer on the second layer of the second macro.

5. The structure of claim 4, wherein the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged by radiation.

6. The structure of claim 5, wherein the radiation is provided by an e-beam, a ultraviolet light, a visible light, or a laser light.