EL display panel, EL display apparatus, and method of manufacturing EL display panel
First Claim
1. A light-emitting panel, comprising:
- a substrate;
a thin film semiconductor including a thin film transistor above the substrate, the thin film transistor including at least a gate electrode, a semiconductor layer above the gate electrode, a gate insulating film between the gate electrode and the semiconductor layer, a first electrode electrically connected to the semiconductor layer, and a second electrode;
a first interlayer insulating film above the thin film semiconductor;
a gate line above the first interlayer insulating film and electrically connected to the gate electrode;
an auxiliary line above the first interlayer insulating film;
a second interlayer insulating film above the gate line and the auxiliary line; and
an electroluminescence emitter including two electrodes and a light-emitting layer between the two electrodes, one of the two electrodes being connected to the auxiliary line,wherein the gate line and the auxiliary line are between the first interlayer insulating film and the second interlayer insulating film.
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Abstract
A light-emitting panel includes a thin film semiconductor that includes a thin film transistor. The thin film transistor includes a gate electrode, a semiconductor layer above the gate electrode, a gate insulating film between the gate electrode and the semiconductor layer, a first electrode electrically connected to the semiconductor layer, and a second electrode. A first interlayer insulating film is above the thin film semiconductor. A gate line and an auxiliary line are above the first interlayer insulating film and between the first interlayer insulating film and a second interlayer insulating film. The gate line is electrically connected to the gate electrode. An electroluminescence emitter includes two electrodes and a light-emitting layer between the two electrodes. One of the two electrodes is connected to the auxiliary line.
17 Citations
9 Claims
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1. A light-emitting panel, comprising:
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a substrate; a thin film semiconductor including a thin film transistor above the substrate, the thin film transistor including at least a gate electrode, a semiconductor layer above the gate electrode, a gate insulating film between the gate electrode and the semiconductor layer, a first electrode electrically connected to the semiconductor layer, and a second electrode; a first interlayer insulating film above the thin film semiconductor; a gate line above the first interlayer insulating film and electrically connected to the gate electrode; an auxiliary line above the first interlayer insulating film; a second interlayer insulating film above the gate line and the auxiliary line; and an electroluminescence emitter including two electrodes and a light-emitting layer between the two electrodes, one of the two electrodes being connected to the auxiliary line, wherein the gate line and the auxiliary line are between the first interlayer insulating film and the second interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification
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- Resources
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Current AssigneeJDI Design and Development GK
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Original AssigneePanasonic Corporation (Panasonic Holdings Corporation)
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InventorsKanegae, Arinobu
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Primary Examiner(s)Patel, Ashok
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Application NumberUS13/594,035Publication NumberTime in Patent Office417 DaysField of SearchNoneUS Class Current313/498CPC Class CodesH10K 59/131 Interconnections, e.g. wiri...
