Embedded RF PA temperature compensating bias transistor
First Claim
1. Circuitry comprising:
- a radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage, such that the RF PA amplifying transistor comprises a first array of amplifying transistor elements and a second array of amplifying transistor elements; and
an RF PA temperature compensating bias transistor of the RF PA stage wherein;
the RF PA temperature compensating bias transistor is adapted to provide temperature compensation of bias of the RF PA amplifying transistor;
the RF PA temperature compensating bias transistor is physically disposed between the first array of amplifying transistor elements and the second array of amplifying transistor elements in the RF PA amplifying transistor;
the RF PA temperature compensating bias transistor is thermally coupled to the first array of amplifying transistor elements and the second array of amplifying transistor elements; and
the RF PA stage is adapted to receive and amplify an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.
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Accused Products
Abstract
A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.
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Citations
23 Claims
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1. Circuitry comprising:
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a radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage, such that the RF PA amplifying transistor comprises a first array of amplifying transistor elements and a second array of amplifying transistor elements; and an RF PA temperature compensating bias transistor of the RF PA stage wherein; the RF PA temperature compensating bias transistor is adapted to provide temperature compensation of bias of the RF PA amplifying transistor; the RF PA temperature compensating bias transistor is physically disposed between the first array of amplifying transistor elements and the second array of amplifying transistor elements in the RF PA amplifying transistor; the RF PA temperature compensating bias transistor is thermally coupled to the first array of amplifying transistor elements and the second array of amplifying transistor elements; and the RF PA stage is adapted to receive and amplify an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method comprising:
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providing a radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage, such that the RF PA amplifying transistor comprises a first array of amplifying transistor elements and a second array of amplifying transistor elements; providing an RF PA temperature compensating bias transistor of the RF PA stage wherein; the RF PA temperature compensating bias transistor is disposed between the first array of amplifying transistor elements and the second array of amplifying transistor elements; and the RF PA temperature compensating bias transistor is thermally coupled to the first array of amplifying transistor elements and the second array of amplifying transistor elements ; temperature compensating bias of the RF PA amplifying transistor using the RF PA temperature compensating bias transistor; and receiving and amplifying an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.
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Specification