Boron film interface engineering

• US 8,563,090 B2
• Filed: 06/22/2009
• Issued: 10/22/2013
• Est. Priority Date: 10/16/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Balseanu, Mihaela, Xia, Li-Qun, Witty, Derek R, Chen, Yi
• Primary Examiner(s): EMPIE, NATHAN H
• Application Number:
  US12/489,124
• Publication Number:
  US 20100098884A1
• Time in Patent Office: 1,583 Days
• Field of Search: 427/419.1
• US Class Current: 427/419.1
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/342 Boron nitride
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/76237 introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior

Abstract

Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.

Claims

1. A method of depositing a bilayer liner in a trench on a substrate in a processing chamber, the method comprising:

forming a nitrogen-rich boron nitride layer having a thickness less than or about 15 Å

, wherein the nitrogen-rich boron nitride layer consists of boron and nitrogen; and

forming a boron-containing layer on the nitrogen-rich boron nitride layer;

wherein the nitrogen-rich boron nitride layer reduces diffusion of boron from the boron-containing layer into the substrate.

2. The method of claim 1 wherein the thickness of the boron-containing layer is less than or about 200 Å

.

3. The method of claim 1 wherein the boron-containing layer comprises boron nitride.

4. The method of claim 1 wherein the nitrogen-rich boron nitride layer has an atomic boron concentration of less than about 47% and an atomic nitrogen concentration of greater than about 53%.

5. The method of claim 1 wherein the nitrogen-rich boron nitride layer has an atomic boron concentration of less than about 44% and an atomic nitrogen concentration of greater than about 56%.

6. The method of claim 1 wherein the nitrogen-rich boron nitride layer has an atomic boron concentration of less than about 42% and an atomic nitrogen concentration of greater than about 58%.

7. The method of claim 1, further comprising maintaining a boron concentration within the substrate of less than or about 5×

10¹⁷ at/cm³ at a depth of 3 nm or greater within the substrate.

8. A method of depositing a bilayer liner on a surface of a substrate in a processing chamber, the method comprising:

forming a nitrogen-rich boron nitride layer of barrier material on an interior surface of the processing chamber, wherein the nitrogen-rich boron nitride layer of barrier material consists of boron and nitrogen;

transferring the substrate into the processing chamber;

forming a nitrogen-rich boron nitride layer on the substrate by striking a plasma in the processing chamber to redistribute a portion of the barrier material from the interior surface of the processing chamber onto the substrate, wherein the nitrogen-rich boron nitride layer has a thickness less than or about 15 Å

; and

forming a boron-containing layer on the nitrogen-rich boron nitride layer.

9. The method of claim 8 wherein the surface of the substrate comprises a trench.

10. The method of claim 8 wherein the thickness of the boron-containing layer is less than or about 200 Å

.

11. The method of claim 8 wherein the boron-containing layer comprises boron nitride.