Silicon nitride passivation layer for covering high aspect ratio features
First Claim
1. A method of forming a passivation layer on features of a substrate, the passivation layer comprising a silicon nitride layer, and the method comprising:
- (a) providing a substrate having a plurality of high aspect ratio features in a process zone, the high aspect ratio features comprising (i) interconnects or connector bumps, and (ii) a metal-containing material;
(b) in an initial soaking stage, providing a soaking gas into the process zone to deposit a thin silicon nitride layer on the substrate, the soaking gas comprising silane, ammonia and nitrogen;
(c) in a first stage, (i) forming in the process zone, a deposition gas comprising a silicon-containing gas and a nitrogen-containing gas by introducing a flow of the silicon-containing gas into the process zone and introducing a flow of the nitrogen-containing gas into the process zone, and (ii) energizing the deposition gas to deposit a silicon nitride layer on the features;
(d) in a second stage, forming in the process zone, a treatment gas by stopping the flow of the silicon-containing gas while continuing the flow of the nitrogen-containing gas, and energizing the treatment gas to treat the silicon nitride layer; and
(e) performing the first and second stages a plurality of times.
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Abstract
A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
88 Citations
35 Claims
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1. A method of forming a passivation layer on features of a substrate, the passivation layer comprising a silicon nitride layer, and the method comprising:
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(a) providing a substrate having a plurality of high aspect ratio features in a process zone, the high aspect ratio features comprising (i) interconnects or connector bumps, and (ii) a metal-containing material; (b) in an initial soaking stage, providing a soaking gas into the process zone to deposit a thin silicon nitride layer on the substrate, the soaking gas comprising silane, ammonia and nitrogen; (c) in a first stage, (i) forming in the process zone, a deposition gas comprising a silicon-containing gas and a nitrogen-containing gas by introducing a flow of the silicon-containing gas into the process zone and introducing a flow of the nitrogen-containing gas into the process zone, and (ii) energizing the deposition gas to deposit a silicon nitride layer on the features; (d) in a second stage, forming in the process zone, a treatment gas by stopping the flow of the silicon-containing gas while continuing the flow of the nitrogen-containing gas, and energizing the treatment gas to treat the silicon nitride layer; and (e) performing the first and second stages a plurality of times. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of forming a passivation layer on features of a substrate, the passivation layer comprising a silicon nitride layer, and the method comprising:
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(a) providing a substrate having a plurality of high aspect ratio features in a process zone, the high aspect ratio features comprising (i) interconnects or connector bumps, and (ii) a metal-containing material; (b) in an initial soaking stage, providing a soaking gas into the process zone to deposit a thin silicon nitride layer on the substrate, the soaking gas comprising silane, ammonia and nitrogen; (c) in a first stage, introducing into the process zone, a deposition gas comprising a silicon-containing gas and a nitrogen-containing gas and energizing the deposition gas to deposit the silicon nitride layer on the features of the substrate; (d) in a second stage, introducing an etching gas into the process zone and energizing the etching gas to partially etch the deposited layer; and (e) performing the first and second stages a plurality of times. - View Dependent Claims (24, 25, 26, 27)
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28. A method of forming a passivation layer on features of a substrate, the passivation layer comprising a silicon nitride layer and having a stress gradient through a thickness of the passivation layer, and the method comprising:
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(a) providing a substrate having a plurality of high aspect ratio features in a process zone, the high aspect ratio features comprising (i) interconnects or connector bumps, and (ii) a metal-containing material; (b) in an initial soaking stage, providing a soaking gas into the process zone to deposit a thin silicon nitride layer on the substrate, the soaking gas comprising silane, ammonia and nitrogen; (c) introducing into the process zone, a first deposition gas comprising a silicon-containing gas and a nitrogen-containing gas, the first deposition gas having a first ratio of silicon-containing component to nitrogen-containing component; (d) energizing the first deposition gas to deposit a first silicon nitride layer on the features of the substrate, which comprises a first ratio of silicon to nitrogen through the thickness of the layer; (e) introducing into the process zone, a second deposition gas comprising a silicon-containing gas and a nitrogen-containing gas, the second deposition gas having a second ratio of silicon-containing component to nitrogen-containing component which is less than the first ratio; and (f) energizing the second deposition gas to deposit a second silicon nitride layer on the features of the substrate, which comprises a second ratio of silicon to nitrogen through the thickness of the layer. - View Dependent Claims (29)
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30. A method of forming a passivation layer on features of a substrate, the passivation layer comprising a silicon nitride layer and a stress gradient through a thickness of the layer, and the method comprising:
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(a) providing a substrate having a plurality of features in a process zone; (b) introducing into the process zone, a first deposition gas comprising a silicon-containing gas and a nitrogen-containing gas; (c) energizing the first deposition gas by applying a first power level to a pair of process electrodes to deposit the silicon nitride layer on the features of the substrate; (d) introducing into the process zone, a second deposition gas comprising a silicon-containing gas and a nitrogen-containing gas; and (e) energizing the second deposition gas by applying a second power level to the pair of process electrodes, the second power level being higher than the first power level, to deposit the silicon nitride layer on the features of the substrate. - View Dependent Claims (31, 32, 33, 34, 35)
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Specification