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Method for forming thin film resistor and terminal bond pad simultaneously

  • US 8,563,336 B2
  • Filed: 12/23/2008
  • Issued: 10/22/2013
  • Est. Priority Date: 12/23/2008
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, comprising:

  • simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires, wherein the simultaneously forming comprises depositing a film and performing a single masking and etching of the deposited film; and

    forming a cap over a high current wire simultaneously with the terminal bond pad and the thin film resistor, wherein the cap reduces electromigration effects in the high current wire.

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