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ALD of metal silicate films

  • US 8,563,444 B2
  • Filed: 07/01/2011
  • Issued: 10/22/2013
  • Est. Priority Date: 10/05/2006
  • Status: Active Grant
First Claim
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1. An atomic layer deposition (ALD) method for forming a metal silicate film on a substrate in a reaction space, comprising:

  • a first deposition cycle comprising;

    contacting the substrate with a vapor phase pulse of an oxidizing agent;

    removing excess oxidizing agent from the reaction space;

    contacting the substrate with a vapor phase pulse of a metal halide, wherein the metal comprises hafnium and/or zirconium; and

    removing excess metal halide from the reaction space; and

    a second deposition cycle comprising;

    contacting the substrate with a vapor phase pulse of an oxidizing agent;

    removing excess oxidizing agent from the reaction space;

    contacting the substrate with a vapor phase pulse of a silicon halide; and

    removing excess silicon halide from the reaction space;

    wherein the first and second deposition cycles are repeated according to a predetermined ratio to achieve a metal-rich metal silicate film.

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