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Conformal layers by radical-component CVD

  • US 8,563,445 B2
  • Filed: 02/10/2011
  • Issued: 10/22/2013
  • Est. Priority Date: 03/05/2010
  • Status: Active Grant
First Claim
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1. A method of forming a conformal silicon-and-nitrogen-containing layer on a patterned substrate in a substrate processing region in a substrate processing chamber, the method comprising:

  • mixing a carbon-free silicon-and-nitrogen-containing precursor with a radical-nitrogen precursor, wherein the carbon-free silicon-and-nitrogen-containing precursor is predominantly excited by contact with the radical-nitrogen precursor; and

    depositing a conformal silicon-and-nitrogen-containing layer having a conformal layer thickness on the patterned substrate, wherein the patterned substrate comprises a substrate gap.

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