High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
First Claim
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1. An ambipolar thin film transistor, comprising:
- a gate layer, wherein material of the gate layer is low-resistivity Si or metal conductor;
a silica layer, forming on the gate layer;
an active layer, forming on the silica layer, wherein the active layer is formed by stacking up a n-type semiconductor thin film and a p-type semiconductor thin film;
a source, forming on the gate layer and connecting to one side of the active layer; and
a drain, forming on the gate layer, connecting to another side of the active layer and corresponding to the source, wherein carrier concentration of the n-type semiconductor thin film is changed by changing temperature of the post thermal annealing so as to control the operation voltage, and wherein the temperature range is 150˜
650°
C.
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Abstract
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
3 Citations
10 Claims
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1. An ambipolar thin film transistor, comprising:
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a gate layer, wherein material of the gate layer is low-resistivity Si or metal conductor; a silica layer, forming on the gate layer; an active layer, forming on the silica layer, wherein the active layer is formed by stacking up a n-type semiconductor thin film and a p-type semiconductor thin film; a source, forming on the gate layer and connecting to one side of the active layer; and a drain, forming on the gate layer, connecting to another side of the active layer and corresponding to the source, wherein carrier concentration of the n-type semiconductor thin film is changed by changing temperature of the post thermal annealing so as to control the operation voltage, and wherein the temperature range is 150˜
650°
C. - View Dependent Claims (2, 3, 4, 5)
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6. A high gain complementary inverter with ambipolar thin film transistors, comprising:
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a gate layer, wherein material of the gate layer is low-resistivity Si or metal conductor; a silica layer, forming on the gate layer; a first active layer, forming on the silica layer, wherein the active layer is formed by stacking up a first n-type semiconductor thin film and a first p-type semiconductor thin film; a first source, forming on the gate layer and connecting to one side of the first active layer; a first drain, forming on the gate layer, connecting to another side of the first active layer and corresponding to the first source; a second active layer, forming on the silica layer, wherein the second active layer is formed by stacking up a second n-type semiconductor thin film and a second p-type semiconductor thin film; a second source, forming on the gate layer and connecting to one side of the second active layer; and a second drain, forming on the gate layer, connecting to another side of the second active layer and corresponding to the second source, wherein carrier concentration of the n-type semiconductor thin film is changed by changing temperature of the post thermal annealing so as to control the operation voltage, and wherein the temperature range is 150˜
650°
C. - View Dependent Claims (7, 8, 9, 10)
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Specification