Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a first gate electrode over a substrate having a light-transmitting property, the first gate electrode having a light-transmitting property;
a first insulating layer over the first gate electrode, the first insulating layer comprising a first layer and a second layer over the first layer;
a first oxide semiconductor layer over and in contact with the second layer;
a barrier layer over the first oxide semiconductor layer, the barrier layer having a light-transmitting property;
a first electrode over the first oxide semiconductor layer with the barrier layer interposed therebetween, the first electrode overlapping with the first gate electrode;
a second electrode over the first oxide semiconductor layer with the barrier layer interposed therebetween, the second electrode overlapping with the first gate electrode;
a second insulating layer over the first electrode and the second electrode and in contact with a part of the first oxide semiconductor layer; and
a third insulating layer over and in contact with the second insulating layer,wherein the barrier layer includes a nitride,wherein a carrier concentration of the first oxide semiconductor layer is lower than 1×
1014 cm3,wherein the first electrode and the second electrode each includes an oxide conductor having a light-transmitting property and a resistivity of 2000×
10−
6 Ω
·
cm or lower, andwherein the third insulating layer is in contact with a side surface of the second layer and a top surface of the first layer.
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Abstract
A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.
134 Citations
18 Claims
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1. A semiconductor device comprising:
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a first gate electrode over a substrate having a light-transmitting property, the first gate electrode having a light-transmitting property; a first insulating layer over the first gate electrode, the first insulating layer comprising a first layer and a second layer over the first layer; a first oxide semiconductor layer over and in contact with the second layer; a barrier layer over the first oxide semiconductor layer, the barrier layer having a light-transmitting property; a first electrode over the first oxide semiconductor layer with the barrier layer interposed therebetween, the first electrode overlapping with the first gate electrode; a second electrode over the first oxide semiconductor layer with the barrier layer interposed therebetween, the second electrode overlapping with the first gate electrode; a second insulating layer over the first electrode and the second electrode and in contact with a part of the first oxide semiconductor layer; and a third insulating layer over and in contact with the second insulating layer, wherein the barrier layer includes a nitride, wherein a carrier concentration of the first oxide semiconductor layer is lower than 1×
1014 cm3,wherein the first electrode and the second electrode each includes an oxide conductor having a light-transmitting property and a resistivity of 2000×
10−
6 Ω
·
cm or lower, andwherein the third insulating layer is in contact with a side surface of the second layer and a top surface of the first layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first gate electrode over a substrate having a light-transmitting property, the first gate electrode having a light-transmitting property; a first insulating layer over the first gate electrode, the first insulating layer comprising a first layer and a second layer over the first layer; a first oxide semiconductor layer over and in contact with the second layer; a first barrier layer over the first oxide semiconductor layer, the first barrier layer having a light-transmitting property; a second barrier layer over the first oxide semiconductor layer, the second barrier layer having a light-transmitting property; a first electrode over the first oxide semiconductor layer with the first barrier layer interposed therebetween, the first electrode overlapping with the first gate electrode; a second electrode over the first oxide semiconductor layer with the second barrier layer interposed therebetween, the second electrode overlapping with the first gate electrode; a second insulating layer over the first electrode and the second electrode and in contact with a part of the first oxide semiconductor layer; and a third insulating layer over and in contact with the second insulating layer, wherein the first barrier layer and the second barrier layer include a nitride; wherein a carrier concentration of the first oxide semiconductor layer is lower than 1×
1014 cm3,wherein the first electrode and the second electrode each includes an oxide conductor having a light-transmitting property and a resistivity of 2000×
10−
6 Ω
·
cm or lower, andwherein the third insulating layer is in contact with a side surface of the second layer and a top surface of the first layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification