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Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same

  • US 8,563,977 B2
  • Filed: 09/18/2008
  • Issued: 10/22/2013
  • Est. Priority Date: 09/28/2007
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a gate electrode;

    a gate insulation layer;

    a semiconductor layer formed of an amorphous oxide semiconductor by sputtering;

    a source electrode;

    a drain electrode; and

    a protective layer formed in an oxidative atmosphere,wherein said protective layer is provided on said semiconductor layer in contact with said semiconductor layer, andwherein said semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than said first layer, said second layer being provided on the protective layer side of said semiconductor layer, and said second layer containing a columnar structure of columns surrounded by boundaries which have lower mass density than the columns such that said second layer has a mass density not larger than the mass density of said first layer.

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