Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device, comprising:
- a first semiconductor layer comprising a flat top surface and a plurality of concaves;
a reflector within the plurality of concaves of the first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
a third semiconductor layer on the second semiconductor layer; and
an active layer between the second semiconductor layer and the third semiconductor layer,wherein the reflector has a different material from the first semiconductor layer and the second semiconductor layer,wherein the flat top surface of the first semiconductor layer is physically contacted with a lower surface of the second semiconductor layer and is disposed between the plurality of concaves,wherein the plurality of concaves are spaced apart from each other and have an interval from a lower surface of the first semiconductor layer,wherein the second semiconductor layer is formed of a conductive semiconductor layer doped with a dopant,wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, andwherein a lower vertex point of the reflector is physically contacted with the first semiconductor layer.
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Abstract
A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.
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Citations
20 Claims
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1. A semiconductor light emitting device, comprising:
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a first semiconductor layer comprising a flat top surface and a plurality of concaves; a reflector within the plurality of concaves of the first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; and an active layer between the second semiconductor layer and the third semiconductor layer, wherein the reflector has a different material from the first semiconductor layer and the second semiconductor layer, wherein the flat top surface of the first semiconductor layer is physically contacted with a lower surface of the second semiconductor layer and is disposed between the plurality of concaves, wherein the plurality of concaves are spaced apart from each other and have an interval from a lower surface of the first semiconductor layer, wherein the second semiconductor layer is formed of a conductive semiconductor layer doped with a dopant, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, and wherein a lower vertex point of the reflector is physically contacted with the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor light emitting device, comprising:
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a first semiconductor layer comprising a flat top surface and a plurality of concaves; a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type dopant; a reflector within the plurality of concaves; a first electrode connected to the second semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer and including a second conductive type dopant; an active layer between the second semiconductor layer and the third semiconductor layer; an electrode layer on the third semiconductor layer, wherein the reflector has a different material from the first semiconductor layer and the second semiconductor layer, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, wherein the flat top surface of the first semiconductor layer is disposed between the plurality of concaves, wherein the second semiconductor layer is formed of a conductive nitride-based semiconductor layer doped with a dopant, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, wherein at least one of the plurality of concaves has a polyhedron shape with a lower vertex point, wherein a lower vertex point of the reflector is physically contacted with the first semiconductor layer, and wherein the second semiconductor layer is physically contacted with the first semiconductor layer and is electrically connected to the first electrode. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor light emitting device, comprising:
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a first semiconductor layer comprising a flat top surface region and a concave regions; a reflector within the concave regions of the first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; and an active layer between the second semiconductor layer and the third semiconductor layer, wherein the reflector has a different material from the first semiconductor layer and the second semiconductor layer, wherein the flat top surface region of the first semiconductor layer is physically contacted with a lower surface of the second semiconductor layer, wherein the concave region has at least two concaves and a position of the concaves is positioned less high than the flat top surface region from a lower surface of the first semiconductor layer, wherein the second semiconductor layer is formed of a conductive semiconductor layer doped with a dopant, wherein the reflector is disposed between the first semiconductor layer and the second semiconductor layer, wherein at least one of the plurality of concaves has a polyhedron shape with a lower vertex point, and wherein a lower vertex point of the reflector is physically contacted with the first semiconductor layer.
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Specification