Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

• US 8,563,998 B2
• Filed: 03/26/2009
• Issued: 10/22/2013
• Est. Priority Date: 03/31/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wegleiter, Walter, Wirth, Ralph, Barchmann, Bernd
• Primary Examiner(s): Ingham, John C
• Application Number:
  US12/934,327
• Publication Number:
  US 20110024790A1
• Time in Patent Office: 1,671 Days
• Field of Search: 257/678, 257/738, 257/778, 257/E33.059, 257/98, 257/E21.504, 438/26, 438/29
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Claims

1. An optoelectronic semiconductor component comprising:

a connection support with a connection site and electrical conductors on the connection side,

at least one optoelectronic semiconductor chip comprising chip flanks, mounted on the connection side and electrically connected to the connection support and comprising a radiation passage face remote from the connection side,

an adhesion-promoting intermediate film comprising silicone, applied to the connection side and covering the latter at least in selected places, and

at least one radiation-transmissive cast body comprising or consisting of a silicone which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film,

wherein

1) the intermediate film, the connection side and the chip flanks enclose a cavity and the intermediate film directly contacts the semiconductor chip and the connection side on a first side of the intermediate film, and with the cast body on a second side of the intermediate film,

2) the intermediate film is made of a material not transmissive to radiation emitted by the optoelectronic semiconductor chip,

3) the optoelectronic semiconductor chip is electrically connected by the electrical conductors located between the optoelectronic semiconductor chip and the connection support,

4) the intermediate film partially covers the radiation passage face, and

5) the intermediate film has a constant thickness.

2. The optoelectronic semiconductor component according to claim 1, wherein a radiation passage face of the semiconductor chip is covered at least in selected places by the intermediate film.

3. The optoelectronic semiconductor component according to claim 1, wherein the cast body and/or the intermediate film contain at least one admixture in the form of a diffuser, conversion and/or filter agent.

4. The optoelectronic semiconductor component according to claim 1, wherein the connection support comprises a metal or a metal alloy, a plastics material or a ceramic material.

5. The optoelectronic semiconductor component according to claim 1, wherein the intermediate film does not transmit radiation, and wherein the intermediate film comprises an opening at least in places at a radiation passage face.

6. The optoelectronic semiconductor component according to claim 1, having no housing apart from the connection support, the intermediate film and the cast body.

7. A method of producing an optoelectronic semiconductor component, comprising:

providing a connection support with a connection side,

providing at least one semiconductor chip,

mounting the semiconductor chip on the connection side and electrically connecting the semiconductor chip to the connection support,

applying an adhesion-promoting intermediate film comprising silicone to the connection side and covering the connection side at least in selected locations by applying a partially crosslinked intermediate film to the connection side and curing the intermediate film applied by lamination,

producing a cast body comprising or consisting of a silicone which at least partially surrounds the semiconductor chip, the cast body being mechanically connected to the connecting support by the intermediate film,

wherein

     1) the adhesion-promoting intermediate film is in direct contact with the semiconductor chip and the connection side on a first side and with the cast body on a second side, and

     2) at least one recess is provided in the intermediate film by laser ablation.

8. The method according to claim 7, wherein the intermediate film is applied over the entire surface of the connection side and of the semiconductor chip.

9. The method according to claim 7, wherein the cast body is produced by compression molding, and the connection support forms part of a mold.

10. The method according to claim 7, wherein volume shrinkage of the intermediate film caused by curing is less than 3%.

11. The method according to claim 7, wherein the intermediate film, the connection side and the chip flanks enclose a cavity.

12. A method of producing an optoelectronic semiconductor component, comprising:

providing a connection support with a connection side,

providing at least one semiconductor chip,

mounting the semiconductor chip on the connection side and electrically connecting the semiconductor chip to the connection support,

applying an adhesion-promoting intermediate film comprising silicone to the connection side and covering the connection side at least in selected locations by applying a partially crosslinked intermediate film to the connection side and curing the intermediate film applied by lamination, and

producing a cast body comprising or consisting of silicone which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film,

wherein

     1) the adhesion-promoting intermediate film is in direct contact with the semiconductor chip and the connection side on a first site and with the cast body on a second side,

     2) the intermediate film, the connection side and the chip flanks enclose a cavity, and

     3) the intermediate film has a constant thickness.

13. The method of claim 12, wherein the intermediate film partially covers the radiation passage face.