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Vertical topology light emitting device

  • US 8,564,016 B2
  • Filed: 11/15/2012
  • Issued: 10/22/2013
  • Est. Priority Date: 04/09/2002
  • Status: Active Grant
First Claim
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1. A vertical topology light emitting device, comprising:

  • a conductive support structure comprising Cu;

    a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au;

    a second adhesion layer disposed on the first adhesion layer;

    a first metal layer disposed on the second adhesion layer;

    a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti;

    a GaN-based semiconductor structure disposed on the second metal layer;

    an inter-layer disposed on the GaN-based semiconductor structure; and

    a metal contact disposed on the inter-layer,wherein the first metal layer directly contacts the second metal layer, andwherein the second metal layer directly contacts the GaN-based semiconductor structure.

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