Vertical topology light emitting device
First Claim
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1. A vertical topology light emitting device, comprising:
- a conductive support structure comprising Cu;
a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au;
a second adhesion layer disposed on the first adhesion layer;
a first metal layer disposed on the second adhesion layer;
a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti;
a GaN-based semiconductor structure disposed on the second metal layer;
an inter-layer disposed on the GaN-based semiconductor structure; and
a metal contact disposed on the inter-layer,wherein the first metal layer directly contacts the second metal layer, andwherein the second metal layer directly contacts the GaN-based semiconductor structure.
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Abstract
A vertical topology light emitting device comprises a conductive adhesion structure having a first surface and a second surface; a conductive support structure on the first surface; a reflective structure on the second surface, the reflective structure also serving as a first electrode; a semiconductor structure on the reflective structure; and a second electrode on the semiconductor structure.
125 Citations
20 Claims
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1. A vertical topology light emitting device, comprising:
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a conductive support structure comprising Cu; a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au; a second adhesion layer disposed on the first adhesion layer; a first metal layer disposed on the second adhesion layer; a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti; a GaN-based semiconductor structure disposed on the second metal layer; an inter-layer disposed on the GaN-based semiconductor structure; and a metal contact disposed on the inter-layer, wherein the first metal layer directly contacts the second metal layer, and wherein the second metal layer directly contacts the GaN-based semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A vertical topology light emitting device, comprising:
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a conductive support structure comprising Cu; a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au; a second adhesion layer disposed on the first adhesion layer; a first metal layer disposed on the second adhesion layer, the first metal layer consisting of Al; a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti; and a GaN-based semiconductor structure disposed over the first adhesion layer, wherein the second metal layer directly contacts the GaN-based semiconductor structure, wherein the second metal layer serves as an n-type electrode to the GaN-based semiconductor structure. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification