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Power semiconductor device with buried source electrode

  • US 8,564,051 B2
  • Filed: 04/04/2005
  • Issued: 10/22/2013
  • Est. Priority Date: 04/09/2004
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a semiconductor body that includes;

    a base region;

    a source region disposed on said base region;

    at least one high conductivity contact region disposed on said base region;

    a common conduction region below said base region;

    a plurality of trenches extending through said base region, each trench extending into said semiconductor body from a top surface of said semiconductor body and including a bottom and opposing sidewalls;

    a gate electrode disposed inside each trench and insulated from said base region by a respective gate insulation layer, said gate electrode including a bottom surface and a top surface which is below said top surface of said semiconductor body;

    an insulation plug residing over a respective top surface of a respective gate electrode and extending above said top surface of said semiconductor body;

    a buried source electrode in each trench disposed below and insulated from a respective gate electrode by an insulation interlayer substantially thinner than said insulation plug, said buried source electrode not extending beyond said common conduction region;

    at least one source electrode connector;

    a source contact electrically coupled to said at least one source electrode connector and extending over said insulation plugs, whereby said source contact is electrically connected to said buried source electrodes; and

    an insulation body disposed between said buried source electrodes and said common conduction region.

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