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Large bit-per-cell three-dimensional mask-programmable read-only memory

  • US 8,564,070 B2
  • Filed: 05/24/2010
  • Issued: 10/22/2013
  • Est. Priority Date: 05/24/2010
  • Status: Expired due to Fees
First Claim
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1. A three-dimensional mask-programmable read-only memory including a plurality of mask-programmable read-only memory levels stacked above and coupled to a semiconductor substrate, comprising:

  • a first memory cell comprising a first resistive layer;

    a second memory cell comprising a second resistive layer;

    a third memory cell comprising said first and second resistive layers;

    wherein each of said first, second and third memory cells comprises a quasi-conduction layer, and said first, second and third memory cells have different current-voltage characteristics.

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