Semiconductor device
First Claim
1. A semiconductor device comprising:
- a circuit, the circuit comprising an input terminal, a first transmission gate, a second transmission gate, a first inverter, a second inverter, a functional circuit, a clocked inverter, and an output terminal,the functional circuit comprising;
a first transistor, a second transistor, a third transistor, and a capacitor,wherein the first transistor and the second transistor are p-channel transistors,wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the capacitor, andwherein the other of the electrodes of the capacitor is electrically connected to a second wiring,wherein the input terminal is electrically connected to a first terminal of the first transmission gate,wherein a second terminal of the first transmission gate is electrically connected to a first terminal of the first inverter and the other of the source and the drain of the second transistor,wherein a second terminal of the first inverter and a gate of the second transistor are electrically connected to a first terminal of the second transmission gate,wherein a second terminal of the second transmission gate is electrically connected to a first terminal of the second inverter and a second terminal of the clocked inverter, andwherein a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to the output terminal.
1 Assignment
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Accused Products
Abstract
A semiconductor device in which an input terminal is electrically connected to a first terminal of a first transmission gate; a second terminal of the first transmission gate is electrically connected to a first terminal of a first inverter and a second terminal of a functional circuit; a second terminal of the first inverter and a first terminal of the functional circuit are electrically connected to a first terminal of a second transmission gate; a second terminal of the second transmission gate is electrically connected to a first terminal of a second inverter and a second terminal of a clocked inverter; a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to an output terminal; and the functional circuit includes a data holding portion between a transistor with small off-state current and a capacitor.
130 Citations
21 Claims
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1. A semiconductor device comprising:
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a circuit, the circuit comprising an input terminal, a first transmission gate, a second transmission gate, a first inverter, a second inverter, a functional circuit, a clocked inverter, and an output terminal, the functional circuit comprising; a first transistor, a second transistor, a third transistor, and a capacitor, wherein the first transistor and the second transistor are p-channel transistors, wherein one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor, wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the capacitor, and wherein the other of the electrodes of the capacitor is electrically connected to a second wiring, wherein the input terminal is electrically connected to a first terminal of the first transmission gate, wherein a second terminal of the first transmission gate is electrically connected to a first terminal of the first inverter and the other of the source and the drain of the second transistor, wherein a second terminal of the first inverter and a gate of the second transistor are electrically connected to a first terminal of the second transmission gate, wherein a second terminal of the second transmission gate is electrically connected to a first terminal of the second inverter and a second terminal of the clocked inverter, and wherein a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to the output terminal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a circuit, the circuit comprising an input terminal, a first transmission gate, a second transmission gate, a first inverter, a second inverter, a functional circuit, a clocked inverter, and an output terminal, the functional circuit comprising a first transistor, a second transistor, a third transistor, a fourth transistor, and a capacitor, wherein the first transistor and the second transistor are p-channel transistors, wherein a node is electrically connected to one of a source and a drain of the fourth transistor via the third transistor, wherein the other of the source and the drain of the fourth transistor is electrically connected to a first wiring, wherein one of a source and a drain of the first transistor is electrically connected to the first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor, wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the capacitor, and wherein the other of the electrodes of the capacitor is electrically connected to a second wiring, wherein the input terminal is electrically connected to a first terminal of the first transmission gate, wherein a second terminal of the first transmission gate is electrically connected to a first terminal of the first inverter and the other of the source and the drain of the second transistor, wherein a second terminal of the first inverter and a gate of the second transistor are electrically connected to a first terminal of the second transmission gate, wherein a second terminal of the second transmission gate is electrically connected to a first terminal of the second inverter and a second terminal of the clocked inverter, and wherein a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to the output terminal. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a flip-flop circuit comprising an inverter and a functional circuit, wherein the functional circuit comprising a first transistor, a second transistor comprising an oxide semiconductor layer and a capacitor, wherein the first transistor is a p-channel transistor, wherein the first transistor comprises a single crystal semiconductor layer, wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the inverter and one of a source and a drain of the second transistor, wherein a gate of the first transistor is electrically connected to a second terminal of the inverter, and wherein one of electrodes of the capacitor is electrically connected to the other of a source or a drain of the transistor. - View Dependent Claims (15, 16)
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17. A semiconductor device comprising:
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a circuit, the circuit comprising a first transistor, a second transistor, a third transistor, and a capacitor, wherein the first transistor and the second transistor are p-channel transistors, wherein the third transistor comprises an oxide semiconductor layer, wherein one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor, wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the capacitor, and wherein the other of the electrodes of the capacitor is electrically connected to a second wiring. - View Dependent Claims (18, 19, 20, 21)
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Specification