High-frequency power amplifier device

• US 8,564,366 B2
• Filed: 12/02/2011
• Issued: 10/22/2013
• Est. Priority Date: 12/16/2010
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Namie, Hisanori, Maruyama, Masashi
• Primary Examiner(s): Mottola, Steven J
• Application Number:
  US13/309,629
• Publication Number:
  US 20120154043A1
• Time in Patent Office: 690 Days
• Field of Search: 330/51, 330/295, 330/302, 330/307
• US Class Current: 330/51
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49112 the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/30111 matching
• CPC Class Codes: H01P 5/185 Edge coupled lines
• CPC Class Codes: H03F 1/0277 : Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 1/56 : Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/318 : A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/378 : A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
• CPC Class Codes: H03F 2200/423 : Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
• CPC Class Codes: H03F 2203/7221 : the gated amplifier being switched on or off by a switch at the output of the amplifier
• CPC Class Codes: H03F 2203/7233 : the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network
• CPC Class Codes: H03F 2203/7236 : the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
• CPC Class Codes: H03F 2203/7239 : the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
• CPC Class Codes: H03F 3/245 : with semiconductor devices only
• CPC Class Codes: H03F 3/602 : Combinations of several amplifiers
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

Disclosed is a high-frequency power amplifier device capable of reducing a talk current. For example, the high-frequency power amplifier device has first and second power amplifier circuits, first and second transmission lines, and a region in which the first and second transmission lines are disposed close to each other. Either the first or second power amplifier circuit becomes activated in accordance with an output level. When the second power amplifier circuit is activated, currents flowing in the first and second transmission lines are transmitted in the same direction so that magnetic coupling occurs to strengthen each transmission line'"'"'s magnetic force. When, on the other hand, the first power amplifier circuit is activated, currents flowing in the first and second transmission lines are transmitted in the opposite directions so that magnetic coupling occurs to weaken each transmission line'"'"'s magnetic force.

Claims

1. A high-frequency power amplifier device comprising:

a first power amplifier circuit that amplifies a first input signal;

a second power amplifier circuit that amplifies the first input signal;

a first transmission line that is coupled at one end to an output node of the first power amplifier circuit;

a first capacitance that is coupled to the other end of the first transmission line;

a second transmission line that is coupled at one end to the output node of the first power amplifier circuit and coupled at the other end to an output node of the second power amplifier circuit;

a second capacitance and a transistor switch that are disposed in series between the output node of the second power amplifier circuit and a ground supply voltage; and

a control circuit that activates either the first power amplifier circuit or the second power amplifier circuit in accordance with a mode setup signal, drives the transistor switch to turn off when the first power amplifier circuit is activated, and drives the transistor switch to turn on when the second power amplifier circuit is activated,

wherein the first and second transmission lines include a magnetic coupling region that is positioned close to the first and second transmission lines to cause magnetic coupling, and

wherein, in the magnetic coupling region, the first and second transmission lines are disposed so that the first transmission line originating from the output node side of the first power amplifier circuit is extended in the same direction as the second transmission line originating from the output node side of the second power amplifier circuit.

2. The high-frequency power amplifier device according to claim 1,

wherein the first power amplifier circuit includes a first transistor that amplifies the first input signal, and

wherein the second power amplifier circuit includes a second transistor that amplifies the first input signal and is smaller in size than the first transistor.

3. The high-frequency power amplifier device according to claim 2,

wherein the first and second transistors are bipolar transistors, and

wherein the transistor switch is a MIS transistor.

4. The high-frequency power amplifier device according to claim 3,

wherein the first and second power amplifier circuits and the second capacitance are formed over a first semiconductor chip, and

wherein the transistor switch and the control circuit are formed over a second semiconductor chip.

5. The high-frequency power amplifier device according to claim 2,

wherein the first power amplifier or the second power amplifier includes a third transistor and a fourth transistor, which are coupled in parallel, and

wherein the control circuit further controls the activation and deactivation of the third and fourth transistors independently in accordance with the mode setup signal.

6. A high-frequency power amplifier device comprising:

a first transmission line that is disposed between a first node and a second node;

a second transmission line that is disposed between a third node and a fourth node;

a first power amplifier circuit that amplifies a first input signal and outputs the amplified signal to the first node;

a second power amplifier circuit that amplifies the first input signal and outputs the amplified signal to the third node;

a transistor switch that, when controlled to be on, couples an impedance matching element to the third node, and when controlled to be off, releases the third node; and

a control circuit that activates either the first power amplifier circuit or the second power amplifier circuit in accordance with a mode setup signal, drives the transistor switch to turn off when the first power amplifier circuit is activated, and drives the transistor switch to turn on when the second power amplifier circuit is activated,

wherein the first and second transmission lines are disposed in such a manner that magnetic coupling occurs to weaken each transmission line'"'"'s magnetic force when the first power amplifier circuit is activated and occurs to strengthen each transmission line'"'"'s magnetic force when the second power amplifier circuit is activated.

7. The high-frequency power amplifier device according to claim 6,

wherein the first power amplifier circuit includes a first transistor that amplifies the first input signal, and

wherein the second power amplifier circuit includes a second transistor that amplifies the first input signal and is smaller in size than the first transistor.

8. The high-frequency power amplifier device according to claim 7,

wherein the impedance matching element is a capacitance element, and

wherein the capacitance element and the transistor switch are coupled in series between the third node and a ground supply voltage.

9. The high-frequency power amplifier device according to claim 8,

wherein the first and second power amplifier circuits and the impedance matching element are formed over a first semiconductor chip, and

wherein the transistor switch and the control circuit are formed over a second semiconductor chip.

10. The high-frequency power amplifier device according to claim 7,

wherein the first and second transistors are bipolar transistors, and

wherein the transistor switch is a MIS transistor.

11. The high-frequency power amplifier device according to claim 7,

wherein the first power amplifier or the second power amplifier includes a third transistor and a fourth transistor, which are coupled in parallel, and

wherein the control circuit further controls the activation and deactivation of the third and fourth transistors independently in accordance with the mode setup signal.

12. A high-frequency power amplifier device comprising:

a wiring circuit board;

one or more semiconductor chips mounted over the wiring circuit board;

a first transmission line that is formed by a wiring layer over the wiring circuit board and disposed between a first node and a second node;

a second transmission line that is formed by a wiring layer over the wiring circuit board and disposed between a third node and a fourth node; and

a first bonding wire and a second bonding wire,

wherein the one or more semiconductor chips each include;

a first power amplifier circuit that amplifies a first input signal and outputs the amplified signal to a first pad;

a second power amplifier circuit that amplifies the first input signal and outputs the amplified signal to a second pad;

a transistor switch that, when controlled to be on, couples an impedance matching element to the second pad, and when controlled to be off, releases the second pad; and

a control circuit that activates either the first power amplifier circuit or the second power amplifier circuit in accordance with a mode setup signal, drives the transistor switch to turn off when the first power amplifier circuit is activated, and drives the transistor switch to turn on when the second power amplifier circuit is activated,

wherein the first bonding wire couples the first pad to the first node,

wherein the second bonding wire couples the second pad to the third node,

wherein the fourth node is coupled to the first pad or the first node, and

wherein the first and second transmission lines include a magnetic coupling region that is positioned close to the first and second transmission lines to cause magnetic coupling, and are disposed in the magnetic coupling region so that the first transmission line originating from the output node side of the first power amplifier circuit is extended in the same direction as the second transmission line originating from the output node side of the second power amplifier circuit.

13. The high-frequency power amplifier device according to claim 12,

wherein the first power amplifier circuit includes a first transistor that amplifies the first input signal, and

wherein the second power amplifier circuit includes a second transistor that amplifies the first input signal and is smaller in size than the first transistor.

14. The high-frequency power amplifier device according to claim 13, wherein the first bonding wire and the second bonding wire are disposed close to each other so as to cause magnetic coupling.

15. The high-frequency power amplifier device according to claim 13, further comprising:

a third bonding wire,

wherein the third bonding wire couples the first pad to the fourth node.

16. The high-frequency power amplifier device according to claim 13,

wherein the impedance matching element is a capacitance element, and

wherein the capacitance element and the transistor switch are coupled in series between the second pad and a ground supply voltage.

17. The high-frequency power amplifier device according to claim 16,

wherein the first and second power amplifier circuits and the capacitance element are formed over a first semiconductor chip,

wherein the transistor switch and the control circuit are formed over a second semiconductor chip,

wherein the first and second transistors are bipolar transistors, and

wherein the transistor switch is a MIS transistor.

18. The high-frequency power amplifier device according to claim 13,

wherein the first power amplifier or the second power amplifier includes a third transistor and a fourth transistor, which are coupled in parallel, and

wherein the control circuit further controls the activation and deactivation of the third and fourth transistors independently in accordance with the mode setup signal.