Writer with an AFM write gap

• US 8,564,903 B2
• Filed: 05/16/2011
• Issued: 10/22/2013
• Est. Priority Date: 05/16/2011
• Status: Active Grant

• Current Assignee: Headway Technologies Incorporated (TDK Corporation)
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Min, Tai, Tang, Yuhui, Guan, Lijie, Li, Min
• Primary Examiner(s): Feild, Joseph
• Assistant Examiner(s): POLO, GUSTAVO D
• Application Number:
  US13/068,638
• Publication Number:
  US 20120295133A1
• Time in Patent Office: 890 Days
• Field of Search: 360313-328, 360/125.3, 360/125.71, 360/128
• US Class Current: 360/125.3
• CPC Class Codes: G11B 5/1278 specially adapted for magnetisations perpendicular to the surface of the record carrier
• CPC Class Codes: G11B 5/232 Manufacture of gap
• CPC Class Codes: G11B 5/235 Selection of material for gap filler G11B5/232 takes precedence
• CPC Class Codes: G11B 5/3116 Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks G11B5/3113, G11B5/245 take precedence
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: Y10T 428/1186 with head pole component

Abstract

A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.

Claims

1. A PMR head comprising:

a main pole having an ABS end and a surface forming a first edge of a write gap;

a trailing shield having an edge that is co-planar with said ABS end, wherein said trailing shield has a surface forming a second edge of said write gap that is separated from said first edge;

a write gap layer filling the space formed by the separation of said first, and second surfaces, wherein said write gap layer has antiferromagnetic properties;

whereby

a magnetic write field is produced within said write gap layer resulting from an antiferromagnetic coupling produced by said antiferromagnetic properties of said write gap layer, wherein said antiferromagnetic coupling is between magnetizations of said main pole and magnetizations of said trailing shield, wherein said antiferromagnetic coupling aligns said magnetizations, whereby a combined magnetic field produced by said antiferromagnetically coupled magnetizations of said main pole and said trailing shield has a reduced horizontal component relative to said ABS and an enhanced component perpendicular to said ABS within a region between said main pole and said trailing shield corresponding to said write gap layer and wherein said enhanced flux component thereby enhances the write field strength and the field gradient.

2. The PMR head of claim 1 wherein said write gap layer is a synthetic antiferromagnetic (SAF) structure comprising at least one tri-layer formed as a layer of transition metal sandwiched on each side by a layer of ferromagnetic material, wherein said layers of ferromagnetic material are magnetized, within their planes of formation, in antiparallel directions that are magnetically coupled across said transition metal layer.

3. The PMR head of claim 2 wherein said ferromagnetic material has a negative anisotropy.

4. The PMR head of claim 3 where said ferromagnetic material is Co₈₀Ir₂₀.

5. The PMR head of claim 2 wherein said transition metal is any of the 3d-5d transition metals:

Ru, Rh, Cr, Cu, Au, and said ferromagnetic material is Co₈₀Ir₂₀ or another alloy of Co, Fe and Ni.

6. The PMR head of claim 1 wherein said write gap layer is between approximately 150 angstroms and 350 angstroms in thickness.

7. The PMR head of claim 2 wherein said write gap layer is a layer of the antiferromagnetic material PtMn, NiMn, OsMn, NiMn, NiCrMn, IrMn, FeMn, NiO, CoO or NiCoO.