Combining X-ray and VUV analysis of thin film layers
First Claim
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1. Apparatus for inspection of a sample, comprising:
- an X-ray source, which is configured to irradiate a location on the sample, which includes one or more thin film layers, with a beam of X-rays;
an X-ray detector, which is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays;
a VUV source, which is configured to irradiate the location on the sample with a beam of VUV radiation;
a VUV detector, which is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation; and
a processor, which is configured to process the first signal in order to extract a thickness parameter with respect to one or more of the layers, and to apply the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers.
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Abstract
Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.
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Citations
12 Claims
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1. Apparatus for inspection of a sample, comprising:
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an X-ray source, which is configured to irradiate a location on the sample, which includes one or more thin film layers, with a beam of X-rays; an X-ray detector, which is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays; a VUV source, which is configured to irradiate the location on the sample with a beam of VUV radiation; a VUV detector, which is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation; and a processor, which is configured to process the first signal in order to extract a thickness parameter with respect to one or more of the layers, and to apply the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for inspection of a sample, comprising:
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irradiating a location on the sample, which includes one or more thin film layers, with a beam of X-rays; generating a first signal responsively to the X-rays that are scattered from the sample; irradiating the location on the sample with a beam of VUV radiation; generating a second signal responsively to the VUV radiation that is reflected from the sample; processing the first signal in order to extract a thickness parameter with respect to one or more of the layers; and applying the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification