Combining X-ray and VUV analysis of thin film layers

• US 8,565,379 B2
• Filed: 03/14/2012
• Issued: 10/22/2013
• Est. Priority Date: 03/14/2011
• Status: Active Grant

• Current Assignee: Bruker Technologies Ltd. (Bruker Corporation)
• Original Assignee: Jordan Valley Semiconductors Ltd. (Bruker Corporation)
• Inventors: Mazor, Isaac, Wormington, Matthew, Dag, Ayelet, Khachatryan, Bagrat
• Primary Examiner(s): SONG, HOON K
• Application Number:
  US13/419,497
• Publication Number:
  US 20120275568A1
• Time in Patent Office: 587 Days
• Field of Search: 378 86- 90
• US Class Current: 378/88
• CPC Class Codes: G01N 2021/8438 Mutilayers
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/274 Calibration, base line adjustment, drift correction
• CPC Class Codes: G01N 21/33 using ultraviolet light G01N21/39 takes precedence
• CPC Class Codes: G01N 21/8422 Investigating thin films, e.g. matrix isolation method
• CPC Class Codes: G01N 21/94 Investigating contamination, e.g. dust G01N21/85 takes precedence
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 2223/1006 different radiations, e.g. X and alpha
• CPC Class Codes: G01N 2223/61 thin films, coatings
• CPC Class Codes: G01N 23/207 Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions

Abstract

Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.

Claims

1. Apparatus for inspection of a sample, comprising:

an X-ray source, which is configured to irradiate a location on the sample, which includes one or more thin film layers, with a beam of X-rays;

an X-ray detector, which is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays;

a VUV source, which is configured to irradiate the location on the sample with a beam of VUV radiation;

a VUV detector, which is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation; and

a processor, which is configured to process the first signal in order to extract a thickness parameter with respect to one or more of the layers, and to apply the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers.

2. The apparatus according to claim 1, and comprising a sample chamber, which contains at least the sample and is configured to provide controlled atmospheric conditions for measurements made in the sample chamber using both the X-rays and the VUV radiation.

3. The apparatus according to claim 1, and comprising:

an X-ray module comprising the X-ray source and X-ray detector;

a VUV module comprising the VUV source and VUV detector; and

an equipment front-end module, which is configured to transfer samples between the X-ray module and the VUV module in a controlled environment.

4. The apparatus according to claim 1, wherein the characteristic comprises a composition of the at least one of the layers.

5. The apparatus according to claim 1, wherein the processor is configured to process the first signal in order to derive one or more calibration parameters, and to apply the calibration parameters in processing the second signal.

6. The apparatus according to claim 1, wherein the the one or more thin film layers include a periodic structure with an underlying residual layer, and wherein the the thickness parameter comprises a thickness of the residual layer, and wherein the processor is configured to apply the thickness in processing the second signal in order to find a dimension of the periodic structure.

7. A method for inspection of a sample, comprising:

irradiating a location on the sample, which includes one or more thin film layers, with a beam of X-rays;

generating a first signal responsively to the X-rays that are scattered from the sample;

irradiating the location on the sample with a beam of VUV radiation;

generating a second signal responsively to the VUV radiation that is reflected from the sample;

processing the first signal in order to extract a thickness parameter with respect to one or more of the layers; and

applying the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers.

8. The method according to claim 7, and comprising placing the sample in a sample chamber, which is configured to provide controlled atmospheric conditions for measurements using both the X-rays and the VUV radiation, wherein irradiating the location comprises directing both the beam of the X-rays and the beam of the VUV radiation toward the location while the sample is in the sample chamber.

9. The method according to claim 7, wherein the location on the sample is irradiated with the beam of the X-rays in an X-ray module, and the location on the sample is irradiated with the beam of the VUV radiation in a VUV module, and

wherein the method comprises transferring samples between the X-ray module and the VUV module in a controlled environment performing sample handling functions in a controlled environment using an equipment front-end module that is common to the X-ray module and the VUV module.

10. The method according to claim 7, wherein the characteristic comprises a composition of the at least one of the layers.

11. The method according to claim 7, wherein processing the first and second signals comprises processing the first signal in order to derive one or more calibration parameters, and applying the calibration parameters in processing the second signal.

12. The method according to claim 7, wherein the the one or more thin film layers include a periodic structure with an underlying residual layer, and wherein the thickness parameter comprises a thickness of the residual layer, and processing the second signal comprises applying the thickness in order to find a dimension of the periodic structure.