Using a phase change memory as a high volume memory
First Claim
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1. A non-transitory computer readable medium storing instructions that, if executed, enable a processor-based system to:
- detect an incorrect bit read by an operating phase change memory;
correct the bit on its way to be output while deferring writing the corrected bit back to the memory;
detect a memory power cycle; and
repair said incorrect bit, by writing it back memory, using error correcting code during the memory power cycle.
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Abstract
A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments.
39 Citations
5 Claims
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1. A non-transitory computer readable medium storing instructions that, if executed, enable a processor-based system to:
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detect an incorrect bit read by an operating phase change memory; correct the bit on its way to be output while deferring writing the corrected bit back to the memory; detect a memory power cycle; and repair said incorrect bit, by writing it back memory, using error correcting code during the memory power cycle. - View Dependent Claims (2, 3, 4, 5)
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Specification