Layout method for soft-error hard electronics, and radiation hardened logic cell
First Claim
1. A sequential logic or memory cell and layout, comprising two or more latches, each latch having at least one net that stores a voltage state having a value, and at least one net that stores an opposite value, inverse, of the voltage state, comprising:
- a. an arrangement of contact areas of each net of each latch, which keep a certain voltage state or its inverse, in such a way that the contact areas of at least 4 of these nets are positioned along one line in the layout, and positioned relative to each other such that two contact areas which are placed next to each other;
i. are part of nets which carry the same voltage state, and for which a single event has an opposite effect on the voltage state of the net to which the contact area belong;
orii. are part of different nets, which carry different voltage states, a certain state and its inverse, and for which said single event has the same effect on the voltage of the net.
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Abstract
This invention comprises a layout method to effectively protect logic circuits against soft errors (non-destructive errors) and circuit cells, with layout, which are protected against soft errors. In particular, the method protects against cases where multiple nodes in circuit are affected by a single event. These events lead to multiple errors in the circuit, and while several methods exist to deal with single node errors, multiple node errors are very hard to deal with using any currently existing protection methods. The method is particularly useful for CMOS based logic circuits in modern technologies (.ltoreq.90 nm), where the occurrence of multiple node pulses becomes high (due to the high integration level). It uses a unique layout configuration, which makes the circuits protected against single event generated soft-errors.
65 Citations
20 Claims
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1. A sequential logic or memory cell and layout, comprising two or more latches, each latch having at least one net that stores a voltage state having a value, and at least one net that stores an opposite value, inverse, of the voltage state, comprising:
a. an arrangement of contact areas of each net of each latch, which keep a certain voltage state or its inverse, in such a way that the contact areas of at least 4 of these nets are positioned along one line in the layout, and positioned relative to each other such that two contact areas which are placed next to each other; i. are part of nets which carry the same voltage state, and for which a single event has an opposite effect on the voltage state of the net to which the contact area belong;
orii. are part of different nets, which carry different voltage states, a certain state and its inverse, and for which said single event has the same effect on the voltage of the net. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An integrated electronic circuit comprising:
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contact areas categorized to identify for which contact areas a single event has opposing effects on the voltage state of nets in the circuit, and to identify for which contact areas a single event has non-opposing effects on the voltage state of the nets in the circuit, wherein the effect on the voltage state of the nets in the circuit due to a single event occurring near each of the contact areas is determined for each of the contact areas in the circuit; wherein the contact areas are placed in such a way that when a single event has opposing effects on the voltage state of the circuit nets, the opposing first and second contact areas are placed as close to each other as permitted by the circuit and by design rules associated with the circuit; a first contact area and a second contact area placed with non-opposing effects on the voltage state of the nets in the circuit, said non-opposing effects caused by a single event, wherein the first and second contact areas are non-adjoining, and a third contact area is placed in between the first and second contact areas, wherein said third contact area has an effect on the voltage state of the nets in the circuit opposing those of the first and second contact areas, and wherein the effect of the third contact area on the voltage state of the nets in the circuit is caused by a single event; and wherein the strength of the effect of a single event on the placed contact areas is selected such that the opposing effects are of substantially equal magnitude, but opposite, in effect on the voltage state of the nets in the circuit. - View Dependent Claims (18, 19, 20)
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Specification