Photoelectrochemical etching for chip shaping of light emitting diodes
First Claim
1. A method for fabricating a semiconductor device, comprising:
- performing an etch for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material, wherein the chip shaping comprises varying an angle of incident light during the etch to control one or more angles of one or more resulting surfaces of the III-V semiconductor material.
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Accused Products
Abstract
A photoelectrochemical (PEC) etch is performed for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material. The chip shaping involves varying an angle of incident light during the PEC etch to control an angle of the resulting sidewalls of the III-V semiconductor material. The sidewalls may be sloped as well as vertical, in order to scatter the guided modes out of the III-V semiconductor material rather than reflecting the guided modes back into the III-V semiconductor material. In addition to shaping the chip in order to extract light emitted into guided modes, the chip may be shaped to act as a lens, to focus its output light, or to direct its output light in a particular way.
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Citations
18 Claims
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1. A method for fabricating a semiconductor device, comprising:
performing an etch for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material, wherein the chip shaping comprises varying an angle of incident light during the etch to control one or more angles of one or more resulting surfaces of the III-V semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An apparatus for fabricating a semiconductor device, comprising:
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an electrochemical cell for chemically etching a semiconductor device chip, comprising III-V semiconductor material, during a photoelectrochemical (PEC) etch; a light source for emitting incident light onto the III-V semiconductor material; and means for re-positioning the incident light relative to the III-V semiconductor material in the electrochemical cell, wherein the means for re-positioning varies an angle of the incident light during the PEC etch to control an angle of resulting sidewalls of the semiconductor device chip, thereby chip shaping the device comprised of the III-V semiconductor material in order to extract light emitted into guided modes trapped in the III-V semiconductor material. - View Dependent Claims (17, 18)
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Specification