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Integrated circuit switches, design structure and methods of fabricating the same

  • US 8,569,091 B2
  • Filed: 08/27/2009
  • Issued: 10/29/2013
  • Est. Priority Date: 08/27/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a MEMS switch comprising:

  • forming MEMS structures in a lower and upper cavity, which are connected by a via formed through the MEMS structures and are temporarily filled with a sacrificial material, wherein the forming the MEMS structures comprises;

    forming a first electrode layer on a lower layer of the sacrificial material;

    forming a first dielectric layer on the first electrode layer;

    forming a second electrode layer on the first dielectric layerforming a first insulator layer on a surface of the first electrode layer; and

    forming a second insulator layer on the second electrode layer;

    forming a second dielectric layer surrounding portions of the lower and upper cavity and over the MEMS structures;

    opening a vent hole in the second dielectric layer on a side of the MEMS structures over the lower cavity;

    stripping the sacrificial material to form a void about the MEMS structures using a dry or wet etchant; and

    sealing the vent hole with a capping material.

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