Integrated circuit switches, design structure and methods of fabricating the same
First Claim
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1. A method of manufacturing a MEMS switch comprising:
- forming MEMS structures in a lower and upper cavity, which are connected by a via formed through the MEMS structures and are temporarily filled with a sacrificial material, wherein the forming the MEMS structures comprises;
forming a first electrode layer on a lower layer of the sacrificial material;
forming a first dielectric layer on the first electrode layer;
forming a second electrode layer on the first dielectric layerforming a first insulator layer on a surface of the first electrode layer; and
forming a second insulator layer on the second electrode layer;
forming a second dielectric layer surrounding portions of the lower and upper cavity and over the MEMS structures;
opening a vent hole in the second dielectric layer on a side of the MEMS structures over the lower cavity;
stripping the sacrificial material to form a void about the MEMS structures using a dry or wet etchant; and
sealing the vent hole with a capping material.
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Abstract
Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.
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Citations
9 Claims
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1. A method of manufacturing a MEMS switch comprising:
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forming MEMS structures in a lower and upper cavity, which are connected by a via formed through the MEMS structures and are temporarily filled with a sacrificial material, wherein the forming the MEMS structures comprises; forming a first electrode layer on a lower layer of the sacrificial material; forming a first dielectric layer on the first electrode layer; forming a second electrode layer on the first dielectric layer forming a first insulator layer on a surface of the first electrode layer; and forming a second insulator layer on the second electrode layer; forming a second dielectric layer surrounding portions of the lower and upper cavity and over the MEMS structures; opening a vent hole in the second dielectric layer on a side of the MEMS structures over the lower cavity; stripping the sacrificial material to form a void about the MEMS structures using a dry or wet etchant; and sealing the vent hole with a capping material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification