Method for fabricating a microelectromechanical sensor with a piezoresistive type readout

• US 8,569,092 B2
• Filed: 12/28/2009
• Issued: 10/29/2013
• Est. Priority Date: 12/28/2009
• Status: Expired due to Fees

• Current Assignee: Amphenol Thermometrics, Inc. (Amphenol Corporation)
• Original Assignee: General Electric Company
• Inventors: Mantravadi, Naresh Venkata, Gamage, Sisira Kankanam
• Primary Examiner(s): Rizkallah, Kimberly
• Assistant Examiner(s): NGUYEN, DUY T V
• Application Number:
  US12/647,660
• Publication Number:
  US 20110159627A1
• Time in Patent Office: 1,401 Days
• Field of Search: 438/48, 438/52, 438/53, 257/E21.214
• US Class Current: 438/52
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges

Abstract

A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.

Claims

1. A method for fabricating a sensor, comprising the steps of:

forming a substrate recess in a semiconductor substrate wafer;

forming a device recess in a semiconductor device wafer, wherein said device wafer comprises a first device layer, a second device layer, a first oxide layer, and a second oxide layer, wherein said first oxide layer is located under said first device layer, said second device layer is located under said first oxide layer, and said second oxide layer is located under said second device layer, and wherein said device recess extends through said first device layer to expose said first oxide layer;

securing said first device layer to said substrate wafer, wherein said device recess is aligned over said substrate recess;

implanting a piezoresistive acceleration sensor at a first location in said second device layer and a piezoresistive pressure sensor in said second device layer at a second location, each of the sensors configured to sense flexure in said second device layer; and

selecting a thickness of each of the first device layer, the second device layer, the first oxide layer, and the second oxide layer that corresponds to a predetermined sensitivity factor of each of the acceleration sensor and the pressure sensor.

2. The method for fabricating a sensor of claim 1, wherein said step of forming said device recess in said semiconductor device wafer further comprises the step of etching said first oxide layer using dry oxide etching techniques.

3. The method for fabricating a sensor of claim 1, wherein said step of forming said device recess in said semiconductor device wafer further comprises the step of etching said first oxide layer using wet oxide etching techniques.

4. The method for fabricating a sensor of claim 1, wherein said first oxide layer improves the high temperature performance of said sensor.

5. The method for fabricating a sensor of claim 1, wherein said first oxide layer balances internal stresses within said sensor and improves the sensitivity of said sensor.

6. The method for fabricating a sensor of claim 1, wherein the thickness of said first device layer, said first oxide layer and said second oxide layer determine the sensitivity of said sensor.

7. The method for fabricating a sensor of claim 1, further comprising the step of:

forming a suspended structure in said device wafer disposed over said substrate recess, wherein said suspended structure includes a boundary region that is released from other portions of said device wafer except in a flexure region of the boundary region, wherein said suspended structure includes a proof mass comprised of portions of said first device layer, said first oxide layer and said second device layer, wherein said flexure region of said boundary region and released portion of said boundary region are disposed to permit movement of said proof mass in response to a force, wherein said movement of said proof mass causes flexure in said flexure region, and wherein at least one of said piezoresistive acceleration sensor and said piezoresistive pressure sensor senses said flexure in said flexure region.

8. The method for fabricating a sensor of claim 7, wherein in said step of forming said suspended structure in said device wafer disposed over said substrate recess said boundary region is released from said other portions of said device wafer using dry semiconductor and oxide etching techniques.

9. The method for fabricating a sensor of claim 7, wherein said step of forming said device recess in said semiconductor-device wafer further comprises the step of forming a proof mass recess in said device wafer, wherein said proof mass recess extends through said first device layer to expose said first oxide layer, wherein in said step of forming said suspended structure in said device wafer disposed over said substrate recess said boundary region is released from said other portions of said device water using dry semiconductor and oxide etching techniques, and wherein a portion of said proof mass recess forms a portion of said proof mass.

10. The method for fabricating a sensor of claim 9, wherein said step of forming said proof mass recess in said device wafer uses dry semiconductor etching techniques.

11. The method for fabricating a sensor of claim 9, wherein said step of forming said proof mass recess in said device wafer uses wet semiconductor etching techniques.

12. The method for fabricating a sensor of claim 7, wherein in said step of securing said first device layer of said device wafer to said surface of said substrate wafer said device recess is aligned entirely over said substrate recess.

13. The method for fabricating a sensor of claim 1, wherein said second device layer forms a diaphragm over said device recess and said substrate recess that allows flexure in said second device layer, and wherein at least one of said piezoresistive acceleration sensor and said piezoresistive pressure sensor senses said flexure in said diaphragm.

14. The method for fabricating a sensor of claim 13, wherein in said step of securing said first device layer of said device wafer to said surface of said substrate wafer said device recess is centered over said substrate recess.

15. The method for fabricating a sensor of claim 13, wherein said piezoresistive pressure sensor measures pressure.

16. The method for fabricating a sensor of claim 1, wherein said step of forming a substrate recess in said semiconductor substrate wafer is performed using dry semiconductor etching techniques.

17. The method for fabricating a sensor of claim 1, wherein said step of forming a substrate recess in said semiconductor substrate wafer is performed using wet semiconductor etching techniques.

18. The method for fabricating a sensor of claim 1, wherein said step of forming said device recess in said semiconductor device wafer is performed using dry semiconductor etching techniques.

19. The method for fabricating a sensor of claim 1, wherein said step of forming said device recess in said semiconductor device wafer is performed using wet semiconductor etching techniques.