Electroluminescence display device

• US 8,569,767 B2
• Filed: 07/19/2011
• Issued: 10/29/2013
• Est. Priority Date: 11/19/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ono, Koji, Suzawa, Hideomi, Arao, Tatsuya
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Diaz, Jose R
• Application Number:
  US13/185,989
• Publication Number:
  US 20110272718A1
• Time in Patent Office: 833 Days
• Field of Search: 349/155, 257/40, 257/59, 257/72
• US Class Current: 257/72
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Claims

1. An electroluminescence device comprising:

a substrate;

a thin film transistor over the substrate, the thin film transistor comprising a gate electrode in direct contact with a gate insulating layer;

an insulating film over the thin film transistor;

an electroluminescence element over the insulating film;

a passivation film over the electroluminescence element; and

a counter substrate over the passivation film,

wherein the electroluminescence element is configured to emit light through the counter substrate,

wherein a space between the substrate and the counter substrate is filled with a filler,

wherein a drying agent is mixed in the filler, and

wherein a side surface of the gate electrode is tapered.

2. The electroluminescence device according to claim 1,

wherein the passivation film comprises silicon nitride or silicon oxynitride.

3. The electroluminescence device according to claim 1,

wherein the filler comprises a resin.

4. The electroluminescence device according to claim 1, further comprising a sealant configured to attach the substrate with the counter substrate,

wherein the space is surrounded by the sealant.

5. The electroluminescence device according to claim 1,

wherein the electroluminescence element is capable of emitting white light.

6. The electroluminescence device according to claim 1,

wherein the electroluminescence element comprises:

a reflective electrode over the insulating film;

an electroluminescence layer over the reflective electrode; and

a transparent electrode over the electroluminescence layer.

7. The electroluminescence device according to claim 6,

wherein the electroluminescence layer comprises a polymer.

8. The electroluminescence device according to claim 6,

wherein the electroluminescence element further comprises a charge transporting layer between the reflective electrode and the transparent electrode.

9. The electroluminescence device according to claim 6,

wherein the electroluminescence element further comprises a charge injection layer between the reflective electrode and the transparent electrode.

10. The electroluminescence device according to claim 6,

wherein the electroluminescence layer comprises a π

-conjugated polymer.

11. The electroluminescence device according to claim 6,

wherein the reflective electrode is a lamination film comprising conductive films.

12. The electroluminescence device according to claim 6,

wherein the reflective electrode comprises an alloy which comprises a material selected from aluminum, copper, and silver.

13. An electroluminescence display comprising:

a substrate;

a thin film transistor over the substrate, the thin film transistor comprising a gate electrode in direct contact with a gate insulating layer;

an electroluminescence element electrically connected to the thin film transistor;

a passivation film over the electroluminescence element; and

a counter substrate over the passivation film,

wherein the electroluminescence element is configured to emit light through the counter substrate,

wherein a space between the substrate and the counter substrate is filled with a filler,

wherein a drying agent is mixed in the filler, and

wherein a side surface of the gate electrode is tapered.

14. The electroluminescence display according to claim 13,

wherein the electroluminescence element comprises an organic electroluminescence material.

15. The electroluminescence display according to claim 13,

wherein the electroluminescence element comprises a polymer.

16. The electroluminescence display according to claim 13,

wherein the electroluminescence element comprises a reflective pixel electrode which is electrically connected to the thin film transistor.

17. The electroluminescence display according to claim 13,

wherein the passivation film comprises silicon nitride or silicon oxynitride.

18. The electroluminescence display according to claim 13,

wherein the filler comprises a resin.

19. The electroluminescence display according to claim 13, further comprising a sealant configured to attach the substrate with the counter substrate,

wherein the space is surrounded by the sealant.

20. The electroluminescence display according to claim 13,

wherein the thin film transistor further comprises a second gate electrode between a source and a drain.

21. An electroluminescence display comprising:

a substrate;

a thin film transistor over the substrate, the thin film transistor comprising a gate electrode in direct contact with a gate insulating layer;

an electroluminescence element over the thin film transistor, the electroluminescence element comprising;

a reflective pixel electrode electrically connected to the thin film transistor;

an electroluminescence layer over the reflective pixel electrode; and

a transparent electrode over the electroluminescence layer;

a passivation film over the electroluminescence element; and

a counter substrate over the passivation film,

wherein a space between the substrate and the counter substrate is filled with a filler,

wherein a drying agent is mixed in the filler, and

wherein a side surface of the gate electrode is tapered.

22. The electroluminescence display according to claim 21,

wherein the electroluminescence element further comprises a charge transporting layer between the reflective pixel electrode and the transparent electrode.

23. The electroluminescence display according to claim 21,

wherein the electroluminescence element further comprises a charge injection layer between the reflective pixel electrode and the transparent electrode.

24. The electroluminescence display according to claim 21,

wherein the electroluminescence layer comprises a polymer.

25. The electroluminescence display according to claim 23,

wherein the charge injection layer comprises a polymer.

26. The electroluminescence display according to claim 21,

wherein the reflective pixel electrode is a lamination film comprising conductive films.

27. The electroluminescence display according to claim 21,

wherein the reflective pixel electrode comprises an alloy which comprises a material selected from aluminum, copper, and silver.

28. The electroluminescence display according to claim 21,

wherein the passivation film comprises silicon nitride or silicon oxynitride.

29. The electroluminescence display according to claim 21,

wherein the filler comprises a resin.

30. The electroluminescence display according to claim 21, further comprising a sealant configured to attach the substrate with the counter substrate,

wherein the space is surrounded by the sealant.

31. The electroluminescence display according to claim 21,

wherein the thin film transistor further comprises a second gate electrode between a source and a drain.