Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp
First Claim
1. A Group III nitride semiconductor device which is obtained by laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, whereinthe buffer layer is formed of a single crystalline structure,the buffer layer is made of AlN,a thickness of the buffer layer is within a range of 20 to 100 nm,a lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state,the ground layer is made of GaN and is in contact with the buffer layer, andlattice constants of the buffer layer satisfy a relationship represented by a formula (1):
-
(c0−
c)/(a0−
a)≧
−
1.4
(1)wherein in the formula (1), c0 represents a lattice constant of c-axis of a bulky AlN, c represents a lattice constant of c-axis of the buffer layer, a0 represents a lattice constant a-axis of bulky AlN, and a represents a lattice constant of a-axis of the buffer layer.
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Abstract
A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.
13 Citations
10 Claims
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1. A Group III nitride semiconductor device which is obtained by laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
the buffer layer is formed of a single crystalline structure, the buffer layer is made of AlN, a thickness of the buffer layer is within a range of 20 to 100 nm, a lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state, the ground layer is made of GaN and is in contact with the buffer layer, and lattice constants of the buffer layer satisfy a relationship represented by a formula (1): -
(c0−
c)/(a0−
a)≧
−
1.4
(1)wherein in the formula (1), c0 represents a lattice constant of c-axis of a bulky AlN, c represents a lattice constant of c-axis of the buffer layer, a0 represents a lattice constant a-axis of bulky AlN, and a represents a lattice constant of a-axis of the buffer layer. - View Dependent Claims (2, 3, 4, 5, 9)
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6. A method for manufacturing a Group III nitride semiconductor device, comprising:
- laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
a thickness of the buffer layer is within a range of 20 to 100 nm, the buffer layer is formed of a single crystalline structure, the buffer layer is made of AlN under a condition where a lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state'"'"' the ground layer is made of GaN and is in contact with the buffer layer, and lattice constants of the buffer layer satisfy a relationship represented by a formula (1);
(c0−
c)/(a0−
a)≧
−
1.4
(1)wherein in the formula (1), c0 represents a lattice constant of c-axis of a bulky AlN, c represents a lattice constant of c-axis of the buffer layer, a0 represents a lattice constant a-axis of bulky AlN, and a represents a lattice constant of a-axis of the buffer layer. - View Dependent Claims (7, 8, 10)
- laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
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