Predicting pattern critical dimensions in a lithographic exposure process

• US 8,572,518 B2
• Filed: 12/07/2011
• Issued: 10/29/2013
• Est. Priority Date: 06/23/2011
• Status: Active Grant

• Current Assignee: Nikon Precision Incorporated (Nikon Corporation)
• Original Assignee: Nikon Precision Incorporated (Nikon Corporation)
• Inventors: Tyminski, Jacek K., Popescu, Raluca
• Primary Examiner(s): Thompson, A. M.
• Application Number:
  US13/313,749
• Publication Number:
  US 20120331427A1
• Time in Patent Office: 692 Days
• Field of Search: None
• US Class Current: 716/52
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70641 Focus

Abstract

A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Claims

1. A method of predicting pattern critical dimensions in a lithographic exposure process, comprising:

defining relationships between critical dimension, defocus, and dose;

performing at least one exposure run in creating a pattern on a wafer;

creating a dose map;

creating a defocus map; and

predicting, by a computer device, pattern critical dimensions based on the relationships, the dose map, and the defocus map,

wherein the dose map is created based on dose integrator data; and

the defocus map is created based on wafer table direct interferometer data, total field deviation data, and focus correction data.

2. The method of claim 1, further comprising comparing the predicted pattern critical dimensions to design specification critical dimensions.

3. The method of claim 1, wherein the predicting is performed in situ.

4. The method of claim 1, wherein the predicting is performed during an exposure step of a lithographic process.

5. The method of claim 4, wherein the predicting is performed without using metrology to measure the pattern critical dimensions.

6. The method of claim 1, further comprising creating at least one single exposure critical dimension map from the predicted pattern critical dimensions.

7. The method of claim 6, further comprising creating a double pattern space map and a double pattern line map based on the at least one single exposure critical dimension map and one of a spacer map and an overlay map.

8. The method of claim 1, further comprising using the predicted pattern critical dimensions to perform at least one of monitoring performance of a scanner during the at least one exposure run, troubleshooting the scanner, and tuning the scanner.

9. The method of claim 1, wherein the dose map and defocus map are created using data obtained during the at least one exposure run.

10. The method of claim 1, wherein the defocus map is created based on a vector sum of topography target errors, stage trajectory errors, and image plane excursions.

11. The method of claim 1, wherein the predicting the pattern critical dimensions comprises applying a blur correction based on at least one of dose integrator data and scan synchronization data.

12. The method of claim 1, wherein the relationships between critical dimension, defocus, and dose comprise sets of Bossung curves.

13. The method of claim 12, wherein the sets of Bossung curves are created using a combination of fitting some curves to data points determined using metrology, and modeling other curves based on scanner imaging attributes.

14. The method of claim 1, wherein the relationships between critical dimension, defocus, and dose are defined at plural different locations of a scanner slit.

15. A system for predicting pattern critical dimensions in a lithographic exposure process, comprising:

a computing device configured to;

create a dose map and a defocus map based on data from at least one exposure run that creates a pattern on a wafer; and

predict pattern critical dimensions based on the dose map, the defocus map, and predetermined relationships between critical dimension, defocus, and dose,

wherein the dose map is created based on dose integrator data; and

the defocus map is created based on a vector sum of topography target errors, stage trajectory errors, and image plane excursions.

16. The system of claim 15, wherein the predicting is performed in situ without using metrology to measure the pattern critical dimensions.

17. The system of claim 15, wherein the computing device is configured to create at least one single exposure critical dimension map from the predicted pattern critical dimensions.

18. The system of claim 17, wherein the computing device is configured to create a double pattern space map and a double pattern line map based on the at least one single exposure critical dimension map and one of a spacer map and an overlay map.

19. The system of claim 15, wherein the relationships between critical dimension, defocus, and dose comprise sets of Bossung curves.

20. The system of claim 19, wherein the sets of Bossung curves are created using a combination of:

fitting some curves to data points determined using metrology, and modeling other curves based on scanner imaging attributes.

21. The system of claim 19, wherein the relationships between critical dimension, defocus, and dose are defined at plural different locations of a scanner slit.

22. The system of claim 15, wherein the computing device receives the data from a scanner that performs the at least one exposure run.

23. A computer program product comprising program code stored in a computer readable medium that, when executed on a computing device, causes the computing device to:

create a dose map and a defocus map based on data from at least one exposure run that creates a pattern on a wafer; and

predict pattern critical dimensions based on the dose map, the defocus map, and predetermined relationships between critical dimension, defocus, and dose,

wherein the dose map is created based on dose integrator data; and

the defocus map is created based on a vector sum of topography target errors, stage trajectory errors, and image plane excursions.

24. The computer program product of claim 23, wherein the predicting is performed in situ without using metrology to measure the pattern critical dimensions.

25. The computer program product of claim 23, wherein the computing device is configured to create at least one single exposure critical dimension map from the predicted pattern critical dimensions.

26. The computer program product of claim 25, wherein the computing device is configured to create a double pattern space map and a double pattern line map based on the at least one single exposure critical dimension map and one of a spacer map and an overlay map.

27. The computer program product of claim 23, wherein the relationships between critical dimension, defocus, and dose comprise sets of Bossung curves.

28. The computer program product of claim 27, wherein the sets of Bossung curves are created using a combination of fitting some curves to data points determined using metrology, and modeling other curves based on scanner imaging attributes.

29. The computer program product of claim 27, wherein the relationships between critical dimension, defocus, and dose are defined at plural different locations of a scanner slit.