Method for performing pattern decomposition for a full chip design

• US 8,572,521 B2
• Filed: 11/13/2008
• Issued: 10/29/2013
• Est. Priority Date: 11/13/2007
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Chen, Hong, Li, Jiangwei, Socha, Robert John, Chen, Luoqui
• Primary Examiner(s): Whitmore, Stacy
• Assistant Examiner(s): AISAKA, BRYCE M
• Application Number:
  US12/270,498
• Publication Number:
  US 20090125866A1
• Time in Patent Office: 1,811 Days
• Field of Search: 716/19, 716/124, 716/52, 716/54, 716/56
• US Class Current: 716/54
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of segmenting the target pattern into a plurality of patches; identifying critical features within each patch which violate minimum spacing requirements; generating a critical group graph for each of the plurality of patches having critical features, where the critical group graph of a given patch defines a coloring scheme of the critical features within the given patch, and the critical group graph identifies critical features extending into adjacent patches to the given patch; generating a global critical group graph for the target pattern, where the global critical group graph includes the critical group graphs of each of the plurality of patches, and an identification of the features extending into adjacent patches; and coloring the target pattern based on the coloring scheme defined by the global critical group graph.

Claims

1. A computer-implemented method for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, comprising the steps of:

segmenting said target pattern into a plurality of patches;

for each of said plurality of patches, identifying critical features within each patch which violate minimum spacing requirements;

identifying one or more critical groups in each patch having identified critical features, wherein said critical groups respectively comprise a plurality of features including one or more of said identified critical features;

generating a critical group graph for each of said plurality of patches having critical features, said critical group graph of a given patch linking together the critical groups and thereby defining a coloring scheme for said critical groups in said given patch, wherein said respective plurality of features within a single critical group share the same color;

identifying critical groups in said plurality of patches that have features extending into adjacent patches;

generating a global critical group graph for said target pattern, including stitching together said critical group graphs of each of said plurality of patches, and inserting graph edges between said critical groups that have said features extending into adjacent patches; and

coloring said features in said target pattern in accordance with said global critical group graph by assigning a color to each of said critical groups,

wherein one or more of the steps of segmenting, identifying, generating a critical group graph, generating a global critical group graph and coloring are implemented using a computer.

2. A method for decomposing a target pattern according to claim 1, wherein each of said plurality of patches have the same size.

3. A method for decomposing a target pattern according to claim 1, wherein said critical features are any features which fail at least one of a minimum pitch rule, a minimum space rule and a minimum corner to corner rule.

4. A method for decomposing a target pattern according to claim 1, wherein said critical group graph defines one or more critical groups for each of said plurality of patches, each of said critical groups comprising at least one critical feature.

5. A method for decomposing a target pattern according to claim 1, wherein said critical group graph identifies weights assigned to conflicting critical groups, said weights defining a priority associated with the given conflict between said critical groups.

6. A method for decomposing a target pattern according to claim 1, wherein the plurality of patches comprise contiguous, non-overlapping sections of the target pattern.

7. A method for decomposing a target pattern according to claim 1, further comprising, before generating said critical group graphs, assigning each of said plurality of patches to a respective computer processor, wherein each said respective computer processor simultaneously generates said critical group graph for said respective patch in parallel.

8. A non-transitory computer readable storage medium having stored thereon a computer program for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, when executed, causing a computer to perform the steps of:

segmenting said target pattern into a plurality of patches;

for each of said plurality of patches, identifying critical features within each patch which violate minimum spacing requirements;

identifying one or more critical groups in each patch having identified critical features, wherein said critical groups respectively comprise a plurality of features including one or more of said identified critical features;

generating a critical group graph for each of said plurality of patches having critical features, said critical group graph of a given patch linking together the critical groups and thereby defining a coloring scheme for said critical groups in said given patch, wherein said respective plurality of features within a single critical group share the same color;

identifying critical groups in said plurality of patches that have features extending into adjacent patches;

generating a global critical group graph for said target pattern, including stitching together said critical group graphs of each of said plurality of patches, and inserting graph edges between said critical groups that have said features extending into adjacent patches; and

coloring said features in said target pattern in accordance with said global critical group graph by assigning a color to each of said critical groups.

9. A non-transitory computer readable storage medium according to claim 8, wherein each of said plurality of patches have the same size.

10. A non-transitory computer readable storage medium according to claim 8, wherein said critical features are any features which fail at least one of a minimum pitch rule, a minimum space rule and a minimum corner to corner rule.

11. A non-transitory computer readable storage medium according to claim 8, wherein said critical group graph defines one or more critical groups for each of said plurality of patches, each of said critical groups comprising at least one critical feature.

12. A non-transitory computer readable storage medium according to claim 8, wherein said critical group graph identifies weights assigned to conflicting critical groups, said weights defining a priority associated with the given conflict between said critical groups.

13. A non-transitory computer readable storage medium according to claim 8, wherein the plurality of patches comprise contiguous, non-overlapping sections of the target pattern.

14. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system;

(c) using patterns on masks to endow the projection beam with patterns in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein in step (c), providing a pattern on a mask includes the steps of;

segmenting a target pattern into a plurality of patches;

for each of said plurality of patches, identifying critical features within each patch which violate minimum spacing requirements;

identifying one or more critical groups in each patch having identified critical features, wherein said critical groups respectively comprise a plurality of features including one or more of said identified critical features;

generating a critical group graph for each of said plurality of patches having critical features, said critical group graph of a given patch linking together the critical groups and thereby defining a coloring scheme for said critical groups in said given patch, wherein said respective plurality of features within a single critical group share the same color;

identifying critical groups in said plurality of patches that have features extending into adjacent patches;

generating a global critical group graph for said target pattern, including stitching together said critical group graphs of each of said plurality of patches, and inserting graph edges between said critical groups that have said features extending into adjacent patches; and

coloring said features in said target pattern in accordance with said global critical group graph by assigning a color to each of said critical groups.

15. A computer-implemented method for forming masks for use in a photolithography process for imaging a target pattern containing features to be printed on a wafer, comprising the steps of:

segmenting said target pattern into a plurality of patches;

for each of said plurality of patches, identifying critical features within each patch which violate minimum spacing requirements;

identifying one or more critical groups in each patch having identified critical features, wherein said critical groups respectively comprise a plurality of features including one or more of said identified critical features;

generating a critical group graph for each of said plurality of patches having critical features, said critical group graph of a given patch linking together the critical groups and thereby defining a coloring scheme for said critical groups in said given patch, wherein said respective plurality of features within a single critical group share the same color;

identifying critical groups in said plurality of patches that have features extending into adjacent patches;

generating a global critical group graph for said target pattern, including stitching together said critical group graphs of each of said plurality of patches, and inserting graph edges between said critical groups that have said features extending into adjacent patches; and

coloring said features in said target pattern in accordance with said global critical group graph by assigning a color to each of said critical groups,

wherein one or more of the steps of segmenting, identifying, generating a critical group graph, generating a global critical group graph and coloring are implemented using a computer.

16. A method for forming masks according to claim 15, wherein each of said plurality of patches have the same size.

17. A method for forming masks according to claim 15, wherein said critical features are any features which fail at least one of a minimum pitch rule, a minimum space rule and a minimum corner to corner rule.

18. A method for forming masks according to claim 15, wherein said critical group graph defines one or more critical groups for each of said plurality of patches, each of said critical groups comprising at least one critical feature.

19. A method for forming masks according to claim 15, wherein said critical group graph identifies weights assigned to conflicting critical groups, said weights defining a priority associated with the given conflict between said critical groups.

20. A method for forming masks according to claim 15, wherein the plurality of patches comprise contiguous, non-overlapping sections of the target pattern.