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Method and apparatus for filling interconnect structures

  • US 8,575,028 B2
  • Filed: 05/16/2011
  • Issued: 11/05/2013
  • Est. Priority Date: 04/15/2011
  • Status: Active Grant
First Claim
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1. A method comprising:

  • (a) providing a wafer substrate to an apparatus, the wafer substrate including a surface with field regions and a feature;

    (b) electroplating a copper layer onto the surface of the wafer substrate; and

    (c) annealing the copper layer, wherein the annealing reflows the copper in the copper layer and causes redistribution of the copper from the field regions of the wafer substrate to the feature.

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