Methods of forming a pattern on a substrate
First Claim
1. A method of forming a pattern on a substrate, comprising:
- forming first features elevationally over an underlying substrate, the first features comprising longitudinally elongated first lines having first sidewall spacers received longitudinally along opposite sides thereof, first fill material being received laterally between the first sidewall spacers of laterally adjacent first features;
forming second features elevationally over and crossing the first features, the second features comprising longitudinally elongated second lines having second sidewall spacers received longitudinally along opposite sides thereof, second fill material being received laterally between the second sidewall spacers of laterally adjacent second features;
removing the second sidewall spacers from between the second lines and the second fill material; and
removing, to the underlying substrate, portions of the first sidewall spacers from between the first lines and the first fill material that are not covered by the second lines and the second fill material.
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Accused Products
Abstract
A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.
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Citations
35 Claims
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1. A method of forming a pattern on a substrate, comprising:
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forming first features elevationally over an underlying substrate, the first features comprising longitudinally elongated first lines having first sidewall spacers received longitudinally along opposite sides thereof, first fill material being received laterally between the first sidewall spacers of laterally adjacent first features; forming second features elevationally over and crossing the first features, the second features comprising longitudinally elongated second lines having second sidewall spacers received longitudinally along opposite sides thereof, second fill material being received laterally between the second sidewall spacers of laterally adjacent second features; removing the second sidewall spacers from between the second lines and the second fill material; and removing, to the underlying substrate, portions of the first sidewall spacers from between the first lines and the first fill material that are not covered by the second lines and the second fill material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of forming a pattern on a substrate, comprising:
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forming anisotropically etched first sidewall spacers elevationally over an underlying substrate; forming anisotropically etched second sidewall spacers elevationally over and crossing the first sidewall spacers, intersections of the first and second sidewall spacers defining respective elevationally overlapped areas of the first sidewall spacers where the second sidewall spacers cross over the first sidewall spacers; removing the second sidewall spacers where such cross over the first sidewall spacers and exposing the overlapped areas of the first sidewall spacers; and removing material of the first sidewall spacers through the exposed overlapped areas to the underlying substrate while at least a majority of the area of the first sidewall spacers outside of the overlapped areas is masked. - View Dependent Claims (29, 30, 31, 32)
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33. A method of forming a pattern on a substrate, comprising:
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forming a repeating pattern of four first lines elevationally over an underlying substrate; forming a repeating pattern of four second lines elevationally over and crossing the repeating pattern of four first lines, each of the second lines comprising solid material; after forming the first lines and the second lines, removing first alternating second lines of the four second lines from being received over the first lines; and after removing the first alternating second lines of the four second lines, removing elevationally exposed portions of alternating first lines of the four first lines to the underlying substrate using a remaining second alternating of the four second lines as a mask.
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34. A method of forming a pattern on a substrate, comprising:
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forming first and second lines elevationally over an underlying substrate; forming third and fourth lines elevationally over and crossing the first and second lines;
the third and fourth lines each comprising solid material;the first, second, third, and fourth lines forming a quadrilateral there-between; providing a pair of crossing lines within the quadrilateral, the crossing lines each comprising solid material; and using the first line, the second line, the third line, the fourth line, and the pair of crossing lines as a mask while etching through material to form a pattern of four openings which are individually received within a respective different one of four corners of the quadrilateral. - View Dependent Claims (35)
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Specification