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Image sensor array for back side illumination with global shutter using a junction gate photodiode

  • US 8,575,531 B2
  • Filed: 08/16/2011
  • Issued: 11/05/2013
  • Est. Priority Date: 04/26/2011
  • Status: Active Grant
First Claim
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1. A junction gate photo-diode (JGP) pixel, comprising:

  • a JGP accumulating charge in response to impinging photons, the JGP positioned on a substrate including a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer;

    a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier;

    a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD,wherein the PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.

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