Semiconductor device and method for driving the same

• US 8,575,610 B2
• Filed: 08/19/2011
• Issued: 11/05/2013
• Est. Priority Date: 09/02/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Watanabe, Kazunori, Yanagisawa, Makoto
• Primary Examiner(s): HA, NATHAN W
• Application Number:
  US13/213,673
• Publication Number:
  US 20120056646A1
• Time in Patent Office: 809 Days
• Field of Search: 257/59, 257/72, 257/335, 257/359, 257/409
• US Class Current: 257/59
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H03K 2017/6878 using multi-gate field-effect transistors

Abstract

An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.

Claims

1. A semiconductor device comprising:

a source electrode and a drain electrode being apart from each other;

a semiconductor layer being in electrical contact with the source electrode and the drain electrode;

a first insulating layer over at least the semiconductor layer;

a gate electrode over the first insulating layer;

a second insulating layer over at least the gate electrode; and

an electric-field control electrode over the second insulating layer,

wherein the gate electrode overlaps with a first region of the semiconductor layer and the source electrode,

wherein the gate electrode does not overlap with the drain electrode,

wherein the electric-field control electrode overlaps with a second region of the semiconductor layer and is provided between the gate electrode and the drain electrode, and

wherein the electric-field control electrode is electrically connected to the source electrode.

2. The semiconductor device according to claim 1,

wherein a potential of the electric-field control electrode is higher than or equal to a potential of the source electrode and lower than a potential of the gate electrode.

3. The semiconductor device according to claim 1,

wherein the semiconductor layer is an oxide semiconductor layer.

4. A semiconductor device comprising:

a source electrode and a drain electrode being apart from each other;

a semiconductor layer being in electrical contact with the source electrode and the drain electrode;

a first insulating layer over at least the semiconductor layer;

a gate electrode over the first insulating layer;

a second insulating layer over at least the gate electrode;

an electric-field control electrode over the second insulating layer;

a first resistor provided between the source electrode and the gate electrode; and

a second resistor provided between the source electrode and the gate electrode and between the source electrode and the electric-field control electrode,

wherein the gate electrode overlaps with a first region of the semiconductor layer and the source electrode,

wherein the gate electrode does not overlap with the drain electrode,

wherein the electric-field control electrode overlaps with a second region of the semiconductor layer and is provided between the gate electrode and the drain electrode.

5. The semiconductor device according to claim 4,

wherein the first resistor and the second resistor are formed from a same layer as the electric-field control electrode.

6. The semiconductor device according to claim 4,

wherein the semiconductor layer is an oxide semiconductor layer.

7. A semiconductor device comprising:

a gate electrode and an electric-field control electrode being apart from each other;

a first insulating layer over the gate electrode and the electric-field control electrode;

a semiconductor layer over the first insulating layer;

a source electrode being on and in electrical contact with the semiconductor layer and overlapping with the gate electrode; and

a drain electrode over the semiconductor layer to be apart from the source electrode,

wherein the semiconductor layer overlaps with the gate electrode and the electric-field control electrode,

wherein the drain electrode does not overlap with the electric-field control electrode, and

wherein the electric-field control electrode is electrically connected to the source electrode.

8. The semiconductor device according to claim 7,

wherein a potential of the electric-field control electrode is higher than or equal to a potential of the source electrode and lower than a potential of the gate electrode.

9. The semiconductor device according to claim 7,

wherein the semiconductor layer is an oxide semiconductor layer.

10. A semiconductor device comprising:

a gate electrode and a drain electrode being apart from each other;

a first insulating layer over the gate electrode and the drain electrode;

a semiconductor layer being on and in electrical contact with the drain electrode and overlapping with the gate electrode;

a source electrode being on and in electrical contact with the semiconductor layer and overlapping with the gate electrode;

a second insulating layer over at least the semiconductor layer;

an electric-field control electrode over the second insulating layer; and

a wiring over the second insulating layer,

wherein the electric-field control electrode is provided between the gate electrode and the drain electrode,

wherein the electric-field control electrode is electrically connected to the source electrode, and

wherein the wiring is in electrical contact with the drain electrode in an opening portion provided in the first insulating layer.

11. The semiconductor device according to claim 10,

wherein a potential of the electric-field control electrode is higher than or equal to a potential of the source electrode and lower than a potential of the gate electrode.

12. The semiconductor device according to claim 10,

wherein the semiconductor layer is an oxide semiconductor layer.