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Electronic device, semiconductor device and manufacturing method thereof

  • US 8,575,618 B2
  • Filed: 06/25/2012
  • Issued: 11/05/2013
  • Est. Priority Date: 02/03/2005
  • Status: Active Grant
First Claim
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1. An active matrix display device comprising:

  • a gate electrode over a substrate;

    a gate insulating film over the gate electrode;

    a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc;

    a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer;

    a first electrode and a second electrode, each in electrical contact with the semiconductor layer;

    a first insulating film over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and

    a pixel electrode over the first insulating film and electrically connected to one of the first electrode and the second electrode,wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide.

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