Electronic device, semiconductor device and manufacturing method thereof
First Claim
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1. An active matrix display device comprising:
- a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc;
a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer;
a first electrode and a second electrode, each in electrical contact with the semiconductor layer;
a first insulating film over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and
a pixel electrode over the first insulating film and electrically connected to one of the first electrode and the second electrode,wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide.
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Abstract
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
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Citations
27 Claims
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1. An active matrix display device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc; a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode, each in electrical contact with the semiconductor layer; a first insulating film over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and a pixel electrode over the first insulating film and electrically connected to one of the first electrode and the second electrode, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An active matrix display device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc; a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode, each in electrical contact with the semiconductor layer; a first insulating film over the first electrode, the second electrode, the channel protective film and the semiconductor layer; and a pixel electrode over the first insulating film and electrically connected to one of the first electrode and the second electrode, wherein the first insulating film comprises silicon nitride. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An active matrix display device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indium, gallium and zinc; a channel protective film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode, each in electrical contact with the semiconductor layer; a first insulating film over the first electrode, the second electrode, the channel protective film and the semiconductor layer; a pixel electrode over the first insulating film and electrically connected to one of the first electrode and the second electrode; and a light emitting layer over the pixel electrode, wherein the first insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide. - View Dependent Claims (16, 17, 18, 19)
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20. An active matrix display device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a semiconductor layer over the gate electrode with the gate insulating film interposed therebetween, the semiconductor layer comprising a metal oxide comprising indiumand zinc; a first insulating film comprising an inorganic insulating film on and in contact with a portion of the semiconductor layer; a first electrode and a second electrode. each in electrical contact with the semiconductor layer; a second insulating film over the first electrode, the second electrode, the first insulating film and the semiconductor layer; and a pixel electrode over the second insulating film and electrically connected to one of the first electrode and the second electrode, wherein the second insulating film comprises a material selected from the group consisting of silicon nitride and silicon nitride oxide. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMaekawa, Shinji, Kuwabara, Hideaki
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Primary Examiner(s)Ho, Anthony
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Application NumberUS13/532,187Publication NumberTime in Patent Office498 DaysField of Search257/40, 257/59, 257/72, 257/E51.001US Class Current257/72CPC Class CodesH01L 29/41733 for thin film transistors w...H01L 29/458 for thin film silicon, e.g....H01L 29/66765 Lateral single gate single ...H01L 29/78678 with inverted-type structur...H01L 29/7869 having a semiconductor body...
