Light emitting diode with improved light extraction
First Claim
Patent Images
1. A light emitting diode comprising:
- a plurality of exterior surfaces;
a light enhancement feature on at least portions of a first one of said exterior surfaces of said diode, said light enhancement feature being selected from the group consisting of shaping and texturing;
a light enhancement feature on at least portions of at least two of each of the other exterior surfaces of said diode, wherein said other exterior surfaces are at least partially integral to components of said light emitting diode that are distinct from the diode component integral to said first exterior surface, said light enhancement features being selected from the group consisting of shaping, texturing, and reflectors;
ohmic contacts in a lateral orientation, each of said ohmic contacts on a first side of said light emitting diode, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature;
an active region formed from the Group III nitride material system;
wherein one of said light enhancement features comprises a reflector; and
wherein one of said exterior surfaces is on the bottom of said light emitting diode.
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Abstract
A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.
70 Citations
44 Claims
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1. A light emitting diode comprising:
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a plurality of exterior surfaces; a light enhancement feature on at least portions of a first one of said exterior surfaces of said diode, said light enhancement feature being selected from the group consisting of shaping and texturing; a light enhancement feature on at least portions of at least two of each of the other exterior surfaces of said diode, wherein said other exterior surfaces are at least partially integral to components of said light emitting diode that are distinct from the diode component integral to said first exterior surface, said light enhancement features being selected from the group consisting of shaping, texturing, and reflectors; ohmic contacts in a lateral orientation, each of said ohmic contacts on a first side of said light emitting diode, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; an active region formed from the Group III nitride material system; wherein one of said light enhancement features comprises a reflector; and wherein one of said exterior surfaces is on the bottom of said light emitting diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A light emitting diode comprising:
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a plurality of exterior surfaces; a light enhancement feature on at least portions of a first one of said exterior surfaces of said diode, said light enhancement feature being selected from the group consisting of shaping and texturing; a light enhancement feature on at least portions of at least two of each of the other exterior surfaces of said diode, wherein said other exterior surfaces are at least partially integral to components of said light emitting diode that are distinct from the diode component integral to said first exterior surface, said light enhancement features being selected from the group consisting of shaping, texturing, and reflectors, wherein each exterior surface includes a single light enhancement feature; ohmic contacts in a lateral orientation, each of said ohmic contacts on a first side of said light emitting diode, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; wherein one of said light enhancement features comprises a reflector; and wherein at least one of said exterior surfaces is below a substrate.
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14. A light emitting diode comprising:
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a substrate; a Group III nitride active region formed on said substrate, wherein said active region comprises at least one n-type layer and one p-type layer; said substrate and said Group III nitride active region defining a plurality of exterior surfaces; one of said exterior surfaces having a light enhancement feature selected from the group consisting of shaping and texturing; the remainder of said exterior surfaces having light enhancement features selected from the group consisting of shaping, texturing, and reflectors; ohmic contacts in a lateral orientation on a first surface of said active region, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; wherein at least one light enhancement feature on one of said exterior surfaces is a shaped beveled cut in which said exterior surface defines a non-perpendicular angle with respect to said n-type layer; and wherein at least one of said exterior surfaces is below said substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A light emitting diode comprising:
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an active region having at least one n-type layer and one p-type layer wherein said active region includes at least one Group III nitride epitaxial layer; a plurality of exterior surfaces; at least four of said exterior surfaces having light enhancement features selected from the group consisting of beveled cuts, texturing, lenticular surfaces, and reflectors; ohmic contacts in a lateral orientation, each of said ohmic contacts on a first surface of said active region, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; and wherein one of said exterior surfaces is on the bottom of said light emitting diode. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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38. A light emitting diode comprising:
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a plurality of exterior surfaces; an active region formed from the Group III nitride material system; ohmic contacts in a lateral orientation, each of said ohmic contacts on a first side of said light emitting diode; at least one light enhancement feature on at least portions of at least two of said exterior surfaces of said diode, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; wherein one of said light enhancement features comprises a reflector; and wherein one of said exterior surfaces is on the bottom of said light emitting diode. - View Dependent Claims (39, 40, 41, 42)
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43. A light emitting diode comprising:
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a substrate; an active region formed on said substrate, wherein said active region comprises at least one n-type layer and one p-type layer; said substrate and said active region defining a plurality of exterior surfaces; one of said exterior surfaces having a light enhancement feature selected from the group consisting of shaping and texturing; the remainder of said exterior surfaces having light enhancement features selected from the group consisting of shaping, texturing, and reflectors; ohmic contacts in a lateral orientation on a first surface of said active region, each of said ohmic contacts on a respective one of the exterior surfaces having a light enhancement feature; wherein at least one light enhancement feature on one of said exterior surfaces is a shaped beveled cut in which said exterior surface defines a non-perpendicular angle with respect to said active region; and wherein at least one of said exterior surfaces is below said substrate. - View Dependent Claims (44)
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Specification