Semiconductor chip with linear expansion coefficients in direction parallel to sides of hexagonal semiconductor substrate and manufacturing method
First Claim
1. A semiconductor chip on which a power semiconductor device is formed and which comprises a semiconductor substrate made from a hexagonal semiconductor having an anisotropic property in linear expansion coefficient due to a crystal orientation,wherein the semiconductor substrate has a shape of a rectangle on a principal surface,wherein the rectangle is defined by two sides having lengths a and b equal to each other,wherein linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other, andwherein the principal surface of the semiconductor substrate and a (0001) plane or (000-1) plane of the hexagonal semiconductor form an angle θ
- , which satisfies the following expression
−
10°
≦
θ
≦
10°
.
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Accused Products
Abstract
The semiconductor chip (18) of the present invention is a semiconductor chip (18) on which a power semiconductor device (10) is formed, and which includes a semiconductor substrate made from a hexagonal semiconductor, in which the semiconductor substrate has a shape of a rectangle on a principal surface, in which the rectangle is defined by two sides having lengths a and b equal to each other, and in which linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other.
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Citations
17 Claims
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1. A semiconductor chip on which a power semiconductor device is formed and which comprises a semiconductor substrate made from a hexagonal semiconductor having an anisotropic property in linear expansion coefficient due to a crystal orientation,
wherein the semiconductor substrate has a shape of a rectangle on a principal surface, wherein the rectangle is defined by two sides having lengths a and b equal to each other, wherein linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other, and wherein the principal surface of the semiconductor substrate and a (0001) plane or (000-1) plane of the hexagonal semiconductor form an angle θ - , which satisfies the following expression
−
10°
≦
θ
≦
10°
.
- , which satisfies the following expression
-
2. A semiconductor chip on which a power semiconductor device is formed and which comprises a semiconductor substrate made from a hexagonal semiconductor,
wherein the semiconductor substrate has a shape of a rectangle on a principal surface, wherein the rectangle is defined by two sides having lengths a and b equal to each other, and wherein one of the two sides and a < - 11-20>
direction of the hexagonal semiconductor form an angle of 15°
, and another of the two sides and a <
1-100>
direction of the hexagonal semiconductor form an angle of 15°
. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- 11-20>
-
13. A semiconductor wafer, comprising:
-
a wafer made from a hexagonal semiconductor; and a plurality of power semiconductor devices formed on the wafer, wherein the wafer has an anisotropic mechanical property due to crystal orientation on a plane parallel to a principal surface, wherein the wafer is provided with a mark for determining a crystal direction of the hexagonal semiconductor in at least a part of a circumference of the wafer, wherein a direction determined by the mark and a <
11-20>
direction or <
1-100>
direction of the hexagonal semiconductor form an angle β
, which satisfies the following Expression (1);
−
5°
≦
β
≦
5°
(1)wherein the plurality of power semiconductor devices each has an area defined by a rectangle on the principal surface, wherein the rectangle is defined by two sides having one side forming an angle γ
with the direction determined by the mark, and the angle γ
satisfies the following Expression (2) or (2′
)
10°
≦
γ
≦
20°
(2)
40°
≦
γ
≦
50°
(2′
). - View Dependent Claims (14, 15)
-
-
16. A semiconductor wafer, comprising:
-
a wafer made from a hexagonal semiconductor; and a plurality of power semiconductor devices formed on the wafer, wherein the wafer has an anisotropic mechanical property due to crystal orientation on a plane parallel to a principal surface, wherein the wafer is provided with a mark for determining a crystal direction of the hexagonal semiconductor in at least a part of a circumference of the wafer, wherein a direction determined by the mark and a <
11-20>
direction or <
1-100>
direction of the hexagonal semiconductor form an angle β
′
, which satisfies a relation
10°
≦
β
′
20°
, andwherein the plurality of power semiconductor devices each has an area defined by a rectangle on the principal surface of the wafer.
-
-
17. A semiconductor chip manufacturing method, comprising the steps of:
-
dividing a semiconductor wafer, which comprises a wafer made from a hexagonal semiconductor and a plurality of power semiconductor devices formed on the wafer, a plurality of times in parallel to a second direction, which is at an angle of 90°
with a first direction, while moving the semiconductor wafer relative to a dividing position of a wafer dividing device for a distance c at a time in the first direction, which is at an angle of 15°
with a <
11-20>
direction or <
1-100>
direction of the hexagonal semiconductor;rotating strips of the semiconductor wafer, which are obtained by a division, by 90°
relative to the wafer dividing device; anddividing the strips of the semiconductor wafer, which are obtained by a division, a plurality of times in parallel to the first direction, while moving the strips of the semiconductor wafer relative to the dividing position of the wafer dividing device for the distance c at a time in the second direction.
-
Specification