Semiconductor device
First Claim
1. A semiconductor device comprising a programmable circuit, the programmable circuit comprising:
- a unit cell comprising;
an input signal line,an output signal line;
an analog element;
a first transistor comprising an oxide semiconductor in a channel formation region, a first source electrode, a first drain electrode, and a first gate electrode; and
a second transistor comprising a second source electrode, a second drain electrode, and a second gate electrode, the second gate electrode being electrically connected to one of the first source electrode and the first drain electrode, and one of the second source electrode and the second drain electrode being electrically connected to the analog element,wherein the analog element and the second transistor are connected in series between the input signal line and the output signal line.
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Accused Products
Abstract
A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.
124 Citations
27 Claims
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1. A semiconductor device comprising a programmable circuit, the programmable circuit comprising:
a unit cell comprising; an input signal line, an output signal line; an analog element; a first transistor comprising an oxide semiconductor in a channel formation region, a first source electrode, a first drain electrode, and a first gate electrode; and a second transistor comprising a second source electrode, a second drain electrode, and a second gate electrode, the second gate electrode being electrically connected to one of the first source electrode and the first drain electrode, and one of the second source electrode and the second drain electrode being electrically connected to the analog element, wherein the analog element and the second transistor are connected in series between the input signal line and the output signal line. - View Dependent Claims (2, 8, 11, 14, 17, 20, 23)
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3. A semiconductor device comprising a programmable circuit, the programmable circuit including:
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an input signal line, an output signal line; a column of unit cells comprising unit cells, each of the unit cells comprising; an analog element; a first transistor comprising an oxide semiconductor in a channel formation region, a first source electrode, a first drain electrode, and a first gate electrode; and a second transistor comprising a second source electrode, a second drain electrode, and a second gate electrode, the second gate electrode being electrically connected to one of the first source electrode and the first drain electrode, and one of the second source electrode and the second drain electrode being electrically connected to the analog element, wherein, for each unit cell, the analog element and the second transistor are connected in series between the input signal line and the output signal line. - View Dependent Claims (4, 9, 12, 15, 18, 21, 24, 26)
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5. A semiconductor device comprising a programmable circuit, the programmable circuit including:
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an input signal line, an output signal line; a row of unit cells comprising at least a first unit cell and a second unit cell, each of the unit cells comprising; an analog element; a first transistor comprising an oxide semiconductor in a channel formation region, a first source electrode, a first drain electrode, and a first gate electrode; and a second transistor comprising a second source electrode, a second drain electrode, and a second gate electrode, the second gate electrode being electrically connected to one of the first source electrode and the first drain electrode, and one of the second source electrode and the second drain electrode being electrically connected to the analog element, wherein the analog elements and the second transistors of the unit cells are connected in series between the input signal line and the output signal line. - View Dependent Claims (6, 7, 10, 13, 16, 19, 22, 25, 27)
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Specification