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Cost-effective TSV formation

  • US 8,580,682 B2
  • Filed: 09/30/2010
  • Issued: 11/12/2013
  • Est. Priority Date: 09/30/2010
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a substrate having a major surface;

    forming a dielectric layer over the major surface;

    forming a first opening in the substrate;

    forming a second opening in the dielectric layer, wherein the first and the second openings are aligned along a common axis orthogonal to the major surface and have different horizontal dimensions;

    after the step of forming the first opening and before the step of forming the second opening, forming a dielectric liner on surfaces of the substrate exposed to the first opening;

    filling the first and the second openings with a metallic material, wherein the metallic material is continuous; and

    performing a planarization on the metallic material to remove excess portions of the metallic material above a top surface of the dielectric layer, wherein remaining portions of the metallic material form a through-substrate via (TSV) in the first opening, and a first metal pad in the second opening.

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