Thin-film transistor and process for its fabrication

• US 8,581,243 B2
• Filed: 04/16/2008
• Issued: 11/12/2013
• Est. Priority Date: 04/27/2007
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Takahashi, Kenji, Hayashi, Ryo, Sano, Masafumi
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US12/596,059
• Publication Number:
  US 20100059751A1
• Time in Patent Office: 2,036 Days
• Field of Search: 257/43, 257/57, 257/352, 257/353
• US Class Current: 257/43
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less.

Claims

1. A bottom gate type thin-film transistor comprising at least:

a substrate, a gate electrode, a gate insulating layer, and a semiconductor layer in that order;

a pair of a source electrode and a drain electrode, and

said transistor having a lower interface between said gate electrode and said gate insulating layer and an upper interface between said gate insulating layer and said semiconductor layer,

wherein said semiconductor layer is an In—

Ga—

Zn—

O thin film which is an amorphous oxide semiconductor film and shows an electron mobility of not less than 2 cm²/Vs,

wherein said lower interface has a difference between hill tops and dale bottoms of unevenness in a direction along a thickness of the gate insulating layer, of 30 nm or less, and

wherein a difference between hill tops and dale bottoms of unevenness in said direction at said upper interface is not more than a layer thickness of said semiconductor layer, and

wherein said layer thickness of said semiconductor layer is within a range of 15 nm or more to less than 45 nm.

2. A bottom gate type thin-film transistor comprising at least:

a substrate, a gate electrode, a gate insulating layer and a semiconductor layer in that order; and

a pair of a source electrode and a drain electrode,

wherein said semiconductor layer is an In—

Ga—

Zn—

O thin film which is an amorphous oxide semiconductor film and shows an electron mobility of not less than 2 cm²/Vs,

wherein a lower interface between said gate electrode and said gate insulating layer has a difference between hill tops and dale bottoms of unevenness in a direction along a thickness of said gate insulating layer, of 30 nm or less, and

wherein a difference between hill tops and dale bottoms of unevenness in said direction at an upper interface between said gate insulating layer and said semiconductor layer is not more than a layer thickness of said semiconductor layer, and

wherein said layer thickness of said semiconductor layer is within a range of 15 nm or more to less than 45 nm.

3. A bottom gate type thin-film transistor comprising at least:

a substrate, a gate electrode, a gate insulating layer and a semiconductor layer in that order; and

a pair of a source electrode and a drain electrode,

wherein said semiconductor layer is an In—

Ga—

Zn—

O thin film which is an amorphous oxide semiconductor film,

wherein a lower interface between said gate electrode and said gate insulating layer has a difference between hill tops and dale bottoms of unevenness in a direction along a thickness of said gate insulating layer, of 30 nm or less,

wherein a difference between hill tops and dale bottoms of unevenness in said direction at an upper interface between said gate insulating layer and said semiconductor layer is not more than a layer thickness of the semiconductor layer, and

wherein said layer thickness of said semiconductor layer is within a range of 15 nm or more to less than 45 nm, such that said semiconductor layer shows an electron mobility of not less than 2 cm²/Vs.

4. A bottom gate type thin-film transistor comprising at least:

a substrate, a gate electrode, a gate insulating layer and a semiconductor layer in that order; and

a pair of a source electrode and a drain electrode,

wherein said semiconductor layer is an In-Ga-Zn-O thin film which is an amorphous oxide semiconductor film and shows an electron mobility of not less than 2 cm²/Vs,

wherein a surface of said gate electrode in an interface between said gate electrode and said gate insulating layer has a difference between hill tops and dale bottoms of unevenness in a direction along a thickness of the gate insulating layer, of 30 nm or less,

wherein a surface of said gate insulating layer in an interface between said gate insulating layer and said semiconductor layer has a difference between hill tops and dale bottoms of uneveness in the direction, which is not more than a layer thickned of said semiconductor layer and

wherein said layer thickness of said semiconductor layer is within a range of 15 nm or more to less than 45nm.