Thin film transistor (TFT) having copper electrodes
First Claim
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1. A TFT structure comprising a semiconductor material and at least one electrode, wherein the semiconductor material is an oxidic semiconductor material, the at least one electrode comprises an electrode material based on a Cu alloy comprising at least one alloying element at a concentration of 0.1 to 10 at %, the at least one alloying element forming an oxidic intermediate layer at a boundary surface between the electrode material and the oxidic semiconductor material, and wherein the TFT structure comprises at least a source electrode and a drain electrode consisting essentially of the Cu alloy.
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Abstract
A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.
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10 Claims
- 1. A TFT structure comprising a semiconductor material and at least one electrode, wherein the semiconductor material is an oxidic semiconductor material, the at least one electrode comprises an electrode material based on a Cu alloy comprising at least one alloying element at a concentration of 0.1 to 10 at %, the at least one alloying element forming an oxidic intermediate layer at a boundary surface between the electrode material and the oxidic semiconductor material, and wherein the TFT structure comprises at least a source electrode and a drain electrode consisting essentially of the Cu alloy.
Specification