Integrated semiconductor light-emitting device and its manufacturing method

• US 8,581,274 B2
• Filed: 04/30/2007
• Issued: 11/12/2013
• Est. Priority Date: 05/01/2006
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: Horie, Hideyoshi
• Primary Examiner(s): Sengdara, Vongsavanh
• Application Number:
  US12/299,250
• Publication Number:
  US 20100320488A1
• Time in Patent Office: 2,388 Days
• Field of Search: 257/91, 257/88, 257/98, 257/E33.005, 257/E33.056, 438/27, 438/28, 438/29, 438/33
• US Class Current: 257/91
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device.

Claims

1. A process for manufacturing a compound semiconductor light-emitting device including a first light-emitting-unit and a second light-emitting-unit, the process comprising:

preparing a semiconductor wafer which comprises a substrate, an optical coupling layer deposited on the substrate, and a thin-film crystal layer deposited on top of the optical coupling layer, the thin-film crystal layer having an n-type semiconductor layer containing an n-type cladding layer, one active layer structure, and a p-type semiconductor layer containing a p-type cladding layer;

forming a light-emitting-unit separation-trench by dry-etching between a first part and a second part of the thin-film crystal layer, where the first part is a part to be included in the first light-emitting-unit and the second part is a part to be included in the second light-emitting-unit, so that the first light-emitting-unit and the second light-emitting-unit are electrically separated from each other and are formed by separating the one active layer structure, but are optically coupled to each other by the optical coupling layer which is below the first light-emitting-unit and the second light-emitting-unit, wherein light emitted by the first light-emitting unit and the second light-emitting unit is propagated through the optical coupling layer, the first light-emitting unit and the second light-emitting unit have a same emission wavelength, and the optical coupling layer is sufficiently insulative to electrically separate the first light-emitting unit and the second light-emitting unit; and

eliminating the substrate from the optical coupling layer.

2. The process according to claim 1, wherein the semiconductor wafer has, in a part of the wafer to be included in the first light-emitting-unit, a first p-type side electrode connecting to the p-type semiconductor layer and a first n-type side electrode connecting to the n-type semiconductor layer, and has, in a part thereof to be included in the second light-emitting-unit, a second p-type side electrode connecting to the p-type semiconductor layer and a second n-type side electrode connecting to the n-type semiconductor layer.

3. The process according to claim 1, further comprising:

providing the semiconductor wafer, in a part thereof to be included in the first light-emitting-unit, a first p-type side electrode connecting to the p-type semiconductor layer and, in a part thereof to be included in the second light-emitting-unit, a second p-type side electrode connecting to the p-type semiconductor layer; and

providing the semiconductor wafer, in a part thereof to be included in the first light-emitting-unit, a first n-type side electrode connecting to the n-type semiconductor layer and, in a part thereof to be included in the second light-emitting-unit, a second n-type side electrode connecting to the n-type semiconductor layer.

4. The process according to claim 1, further comprising forming a light-emitting-device separation-trench by dry-etching.

5. The process according to claim 4, wherein the light-emitting-device separation-trench formation is performed:

(i) so as to remove a portion of the thin-film crystal layer,

(ii) so as to reach the optical coupling layer, or

(iii) so as to reach the substrate.

6. The process according to claim 4 or 5, wherein the light-emitting-device separation-trench formation is performed by dry etching process using gas selected from the group consisting of Cl₂, BCl₃, SiCl₄, CCl₄, and a combination of two or more of these.

7. The process according to claim 6, wherein a patterned metal-fluoride layer, or a metal-fluoride layer selected from the group consisting of SrF₂, AlF₃, MgF₂, BaF₂, CaF₂, and a combination of two or more of these, is used as an etching mask.

8. The process according to claim 1, wherein the light-emitting-unit separation-trench formation is performed by dry etching process using gas selected from the group consisting of Cl₂, BCl₃, SiCl₄, CCl₄, and a combination of two or more of these.

9. The process according to claim 8, wherein a patterned metal-fluoride layer, or a metal-fluoride layer selected from the group consisting of SrF₂, AlF₃, MgF₂, BaF₂, CaF₂, and a combination of two or more of these, is used as an etching mask.

10. The process according to claim 1, wherein the optical coupling layer has a specific resistance ρ

_oc(Ω

·

cm) of 0.5 (Ω

·

cm) or higher.

11. The processing according to claim 1, wherein the optical coupling layer comprises an undoped semiconductor layer as a layer adjacent to the n-type semiconductor layer.