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Semiconductor device and method for manufacturing the same

  • US 8,581,413 B2
  • Filed: 06/24/2011
  • Issued: 11/12/2013
  • Est. Priority Date: 03/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer over a substrate;

    a transistor comprising a source region and a drain region over the first insulating layer;

    a second insulating layer over the source region and the drain region;

    a third insulating layer over the second insulating layer;

    a contact hole reaching the first insulating layer and in the source region or the drain region, the second insulating layer, and the third insulating layer; and

    a conductive layer over the second insulating layer, the conductive layer covering a side surface of the contact hole, and being in contact with the first insulating layer,wherein an opening in the source region or the drain region is smaller than an opening in the second insulating layer, and the opening in the second insulating layer is smaller than an opening in the third insulating layer.

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