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Nonvolatile memory device

  • US 8,582,353 B2
  • Filed: 12/07/2010
  • Issued: 11/12/2013
  • Est. Priority Date: 12/30/2009
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device, comprising:

  • a memory cell configured to write data in a magneto-resistance device in response to a write current applied to a bit line and a source line;

    a voltage detector configured to sense potentials loaded in the bit line and the source line when a write enable signal is activated;

    a write current controller configured to control activation of a write control signal in response to an output of the voltage detector; and

    a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal.

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