Method of etching a silicon-based material
First Claim
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1. A method of etching a silicon substrate to create silicon pillars on the silicon substrate, the method comprising contacting the silicon substrate with an aqueous solution of:
- a fluoride acid or a fluoride salt,a silver salt capable of electroless deposition of the metal on the silicon in the presence of fluoride ions, andan alcohol.
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Abstract
A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.
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Citations
35 Claims
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1. A method of etching a silicon substrate to create silicon pillars on the silicon substrate, the method comprising contacting the silicon substrate with an aqueous solution of:
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a fluoride acid or a fluoride salt, a silver salt capable of electroless deposition of the metal on the silicon in the presence of fluoride ions, and an alcohol. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of etching a silicon substrate to create silicon pillars on the silicon substrate, the method comprising contacting the silicon substrate with an aqueous solution of:
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a fluoride acid or a fluoride salt, metal salt capable of electroless deposition of the metal on the silicon in the presence of fluoride ions, and an alcohol, wherein the metal salt content of the solution is in the range of 5 to 100 mM. - View Dependent Claims (30, 31, 32, 33, 34, 35)
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Specification