Optical semiconductor device having pre-molded leadframe with window and method therefor

• US 8,586,422 B2
• Filed: 03/13/2012
• Issued: 11/19/2013
• Est. Priority Date: 03/07/2008
• Status: Active Grant

• Current Assignee: Stats Chippac Limited
• Original Assignee: Stats Chippac Limited
• Inventors: Tay, Lionel Chien Hui, Trasporto, Amel Senosa, Camacho, Zigmund R, Bathan, Henry D
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US13/419,242
• Publication Number:
  US 20120168806A1
• Time in Patent Office: 616 Days
• Field of Search: 257/81, 257/99, 257666-677, 257/680, 257/323, 257/434, 257/E23.052, 257/E33.066, 257/E23.141, 257/E23.18, 257/E21.502, 257/E23.045, 438111-116, 438/127
• US Class Current: 438/127
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.

Claims

1. A semiconductor device, comprising:

a substrate including a light transmitting material;

a semiconductor die including an optically active area disposed over the substrate with the optically active area of the semiconductor die aligned with the light transmitting material; and

an encapsulant deposited over the semiconductor die and substrate, wherein the encapsulant includes optical grade material disposed in an area between the light transmitting material and optically active area of the semiconductor die to maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

2. The semiconductor device of claim 1, further including an optical grade underfill material deposited between the semiconductor die and substrate.

3. The semiconductor device of claim 1, further including an underfill material deposited around the light transmitting material to block the encapsulant and maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

4. The semiconductor device of claim 1, further including a ring formed around the light transmitting material to block the encapsulant and maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

5. A semiconductor device, comprising:

a semiconductor die including an optically active area;

a substrate including a light transmitting material disposed within an interior region of the substrate, wherein the semiconductor die is disposed over the substrate with the optically active area of the semiconductor die aligned with the light transmitting material for transmission of the light to the optically active area;

an encapsulant deposited over the semiconductor die and substrate; and

a ring formed around the light transmitting material to block the encapsulant and maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

6. The semiconductor device of claim 5, wherein the light transmitting material includes a dam to block the encapsulant and maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

7. The semiconductor device of claim 5, further including an underfill material deposited around the light transmitting material to block the encapsulant and maintain light transmission between the light transmitting material and optically active area of the semiconductor die.

8. The semiconductor device of claim 5, further including

an opaque filler material disposed around the light transmitting material.

9. The semiconductor device of claim 5, wherein the light transmitting material is formed as a curved lens.

10. A semiconductor device, comprising:

a semiconductor die including an optically active area;

a substrate including a light transmitting material through the substrate and in an elevated area vertically offset with respect to a surface of the substrate, wherein the semiconductor die is disposed over the substrate; and

an encapsulant deposited over the semiconductor die and substrate, wherein the elevated area of the substrate blocks the encapsulant to maintain light transmission to the optically active area of the semiconductor die.

11. The semiconductor device of claim 10, wherein the light transmitting material includes a dam to block the encapsulant.

12. The semiconductor device of claim 10, further including an opaque filler material disposed around the light transmitting material.

13. The semiconductor device of claim 10, further including a notch formed in the light transmitting material.

14. The semiconductor device of claim 10, further including an underfill material deposited around the light transmitting material to block the encapsulant.

15. The semiconductor device of claim 10, further including a clear adhesive layer between the light transmitting material and optically active area of the semiconductor die.

16. The semiconductor device of claim 10, further including glass disposed in the light transmitting material.

17. The semiconductor device of claim 10, further including an optical grade underfill material deposited between the semiconductor die and substrate.

18. The semiconductor device of claim 11, further including an adhesive layer formed over the dam to block the encapsulant.

19. The semiconductor device of claim 12, further including a dam formed over the opaque filler material to block the encapsulant.